Magneto-optical properties of GaBiAs layers

Author(s)

Carvalho, A. R. H. ^[1] ; Gordo, V. Orsi ^[1] ; Galeti, H. V. A. ^[2] ; Gobato, Y. Galvao ^[1] ; de Godoy, M. P. F. ^[1] ; Kudrawiec, R. ^[3] ; Lemine, O. M. ^[4] ; Henini, M. ^[5]

Affiliation

^[1] Univ Fed Sao Carlos, Dept Fis, BR-13560905 Sao Carlos, SP - Brazil

^[2] Univ Fed Sao Carlos, Dept Engn Eletr, BR-13560905 Sao Carlos, SP - Brazil

^[3] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw - Poland

^[4] Al Imam Mohamed Bin Saoud Islamic Univ, Coll Sci, Dept Phys, Riyadh 11623 - Saudi Arabia

^[5] Univ Nottingham, Nottingham Nanotechnol & Nanosci Ctr, Sch Phys & Astron, Nottingham NG7 2RD - England

• Document type: Journal article
• Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS; v. 47, n. 7 FEB 19 2014.
• Web of Science Citations: 9

Abstract

We have investigated the effect of long thermal annealing (3 h) at 200 degrees C on the physical properties of GaBiAs layers with a Bi concentration of 3% by using photoluminescence (PL) and polarized resolved PL under magnetic fields up to 14 T. The PL intensity and the diamagnetic shift of the annealed samples increased substantially. This indicates a reduction of carrier/exciton localization due to defects. In addition, it was found that the degree of the electron spin polarization increases up 41% at 14 T after thermal annealing due to the reduction of the density of defects. (AU)

• FAPESP's process: 12/24055-6 - Optical, electrical and spin properties of semiconductor nanostructures and nanodevices
• Grantee: Yara Galvão Gobato
• Support Opportunities: Regular Research Grants