Advanced search
Start date
Betweenand
Related content
(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

High red emission intensity of Eu:Y2O3 films grown on Si(100)/Si (111) by electron beam evaporation

Full text
Author(s):
Rivera, V. A. G. [1] ; Ferri, F. A. [1] ; Clabel H, J. L. [2] ; Pereira-da-Silva, M. A. [3, 1] ; Nunes, L. A. O. [1] ; Li, M. Siu [1] ; Marega, Jr., E. [1]
Total Authors: 7
Affiliation:
[1] Inst Fis Sao Carlos USP, BR-13560970 Sao Carlos, SP - Brazil
[2] Univ Fed Sao Carlos, Dept Fis, Grp Mat & Disposit, BR-13565905 Sao Carlos, SP - Brazil
[3] UNICEP, Ctr Univ Cent Paulista, BR-13563470 Sao Carlos, SP - Brazil
Total Affiliations: 3
Document type: Journal article
Source: Journal of Luminescence; v. 148, p. 186-191, APR 2014.
Web of Science Citations: 5
Abstract

High red photoluminescence emission has been obtained at room temperature in Eu3+-doped yttrium oxide thin films following thermal treatment. Films with different thicknesses were deposited on Si (1 0 0) and Si(1 1 1) substrates via electron beam evaporation in a vacuum environment. The films were subsequently annealed in an oxygen atmosphere for 5 h at 900 degrees C. The structural and optical properties of the films were measured before and after annealing. An improvement in the emission intensity was observed as a result of the thermal treatment under a controlled atmosphere. This observation is related to the reduction of non radiative processes, as verified by the enhancement of the D-5(0)-> F-7(2) lifetime values. This improvement in the emission intensity was also analyzed in terms of electric and magnetic dipole transitions (D-5(0)-> F-7(2) and D-5(0)-> F-7(1) level transitions, respectively). Both transitions are directly related to the site symmetry and, consequently, to the crystalline structure of the films deposited on the Si(1 0 0)/Si(1 1 1) substrates. (C) 2013 Elsevier B.V. All rights reserved. (AU)

FAPESP's process: 11/21293-0 - Planar waveguides for optical telecommunications from plasmonic
Grantee:Victor Anthony Garcia Rivera
Support Opportunities: Scholarships abroad - Research Internship - Post-doctor
FAPESP's process: 09/08978-4 - Planar Waveguide for Telecommunications from Plasmons
Grantee:Victor Anthony Garcia Rivera
Support Opportunities: Scholarships in Brazil - Post-Doctoral