InGaAs embedding of large InAs quantum dots obtain... - BV FAPESP
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(Reference retrieved automatically from SciELO through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

InGaAs embedding of large InAs quantum dots obtained by pulsed in deposition for long-wavelength applications

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Author(s):
T. E. Lamas [1] ; A. A. Quivy [2]
Total Authors: 2
Affiliation:
[1] Universidade de São Paulo. Instituto de Física. Laboratório de Novos Materiais Semicondutores - Brasil
[2] Universidade de São Paulo. Instituto de Física. Laboratório de Novos Materiais Semicondutores - Brasil
Total Affiliations: 2
Document type: Journal article
Source: Brazilian Journal of Physics; v. 36, p. 405-407, 2006-06-00.
Abstract

In this work we studied the molecular-beam epitaxy of large InAs quantum dots embedded in an InGaAs quantum well. The formation of the quantum dots was performed by pulsed deposition of InAs material, simulating therefore a low deposition rate. Room-temperature photoluminescence experiments carried out on these samples showed intense emissions with a wavelength exceeding 1.35µm. Our preliminary data indicate that even better results can be achieved by further manipulation of the growth conditions. (AU)

FAPESP's process: 98/12779-0 - Experimental and theoretical study of the epitaxial semiconductor nanostructures derived from III-V compounds
Grantee:Gennady Gusev
Support Opportunities: Research Projects - Thematic Grants