MAIA, A. D. B.; DA SILVA, E. C. F.; QUIVY, A. A.; BINDILATTI, V.; DE AQUINO, V. M.; DIAS, I. F. L.. The influence of different indium-composition profiles on the electronic structure of lens-shaped InxGa1-xAs quantum dots. JOURNAL OF PHYSICS D-APPLIED PHYSICS, v. 45, n. 22, JUN 6 2012. Citações Web of Science: 12. (08/00841-7)
LAMAS‚ TE; MARTINI‚ S.; DA SILVA‚ MJ; QUIVY‚ AA; LEITE‚ JR. Morphological and optical properties of p-type GaAs (001) layers doped with silicon. Microelectronics Journal, v. 34, n. 5, p. 701-703, 2003. (98/12779-0, 01/14106-8, 99/10510-7, 99/08979-7, 95/05651-0)
MARTINI, S.; QUIVY, A. A.; SILVA, E. C. F. DA; LEITE, J. R.. Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy. Applied Physics Letters, v. 81, n. 15, p. 2863-2865, Oct. 2002. (98/12779-0, 98/14489-0, 97/07974-6)
SILVA, M. J. DA; QUIVY, A. A.. Anomalous blueshift in vertically coupled InAs/GaAs quantum dots using InGaAs strain-reducing layers. Brazilian Journal of Physics, v. 32, n. 2A, p. 290-292, June 2002. (95/05651-0, 98/14489-0, 99/08979-7, 99/01225-7)
LAMAS, T. E.; QUIVY, A. A.. On the Morphology of Films Grown by Droplet-Assisted Molecular Beam Epitaxy. Brazilian Journal of Physics, v. 32, n. 2A, p. 399-401, June 2002. (95/05651-0, 98/14489-0, 99/10510-7, 99/01225-7)
MARTINI, S.; QUIVY, A. A.. In-situ Determination of Indium Segregation in InGaAs/GaAs Quantum Wells Grown by Molecular Beam Epitaxy. Brazilian Journal of Physics, v. 32, n. 2A, p. 359-361, June 2002. (98/12779-0, 98/14489-0, 97/07974-6)
SILVA, M. J. DA; QUIVY, A. A.; GONZÁLEZ-BORRERO, P. P.; MAREGA JUNIOR, E.. Maximization of the InAs quantum-dot density through the growth of an intentionally non-homogeneous sample. Journal of Crystal Growth, v. 236, n. 1/3, p. f^4145, Mar. 2002. (99/08979-7)
MARTINI, S.; QUIVY, A. A.; LAMAS, T. E.; SILVA, M. J. DA; SILVA, E. C. F. DA; LEITE, J. R.. Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface. Journal of Crystal Growth, v. 251, n. 1/4, p. 101-105, Apr. 2003. (99/08979-7, 99/10510-7, 01/14106-8)
MAIA, A. D. B.; DA SILVA, E. C. F.; QUIVY, A. A.; BINDILATTI, V.; DE AQUINO, V. M.; DIAS, I. F. L.. Simulation of the electronic properties of InxGa1-xAs quantum dots and their wetting layer under the influence of indium segregation. Journal of Applied Physics, v. 114, n. 8, AUG 28 2013. Citações Web of Science: 8. (08/00841-7)
DA SILVA‚ MJ; QUIVY‚ AA; GONZALEZ-BORRERO‚ PP; MAREGA‚ E.. Study of the spontaneous alignment of InAs quantum dots along the surface steps as a function of the InAs coverage. Thin Solid Films, v. 410, n. 1, p. 188-193, 2002. (95/05651-0, 99/01225-7, 99/08979-7)
SILVA, M. J. DA; QUIVY, A. A.; GONZÁLEZ-BORRERO, P. P.; MAREGA JUNIOR, E.. Maximization of the InAs quantum-dot density through the growth of an intentionally non-homogeneous sample. Journal of Crystal Growth, v. 236, n. 1/3, p. f^4145, Mar. 2002. (99/08979-7)
MARTINI, S.; QUIVY, A. A.; LAMAS, T. E.; SILVA, M. J. DA; SILVA, E. C. F. DA; LEITE, J. R.. Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface. Journal of Crystal Growth, v. 251, n. 1/4, p. 101-105, Apr. 2003. (99/08979-7, 99/10510-7, 01/14106-8)
LAMAS‚ TE; MARTINI‚ S.; DA SILVA‚ MJ; QUIVY‚ AA; LEITE‚ JR. Morphological and optical properties of p-type GaAs (001) layers doped with silicon. Microelectronics Journal, v. 34, n. 5, p. 701-703, 2003. (98/12779-0, 01/14106-8, 99/10510-7, 99/08979-7, 95/05651-0)
MORELHÃO‚ SL; AVANCI‚ LH; FREITAS‚ R.; QUIVY‚ AA. Strain field of InAs QDs on GaAs (001) substrate surface: characterization by synchrotron X-ray Renninger scanning. Microelectronics Journal, v. 36, n. 3, p. 219-222, 2005. (02/10185-3, 02/10387-5)
FERNANDES, F. M.; DA SILVA, E. C. F.; QUIVY, A. A.. Mid-infrared photodetection in an AlGaAs/GaAs quantum-well infrared photodetector using photoinduced noise. Journal of Applied Physics, v. 118, n. 20, NOV 28 2015. Citações Web of Science: 2. (08/00841-7)
DA SILVA‚ MJ; MARTINI‚ S.; LAMAS‚ TE; QUIVY‚ AA; DA SILVA‚ ECF; LEITE‚ JR. Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 µm. Microelectronics Journal, v. 34, n. 5, p. 631-633, 2003. (98/12779-0, 99/08979-7)
SILVA, M. J. DA; QUIVY, A. A.; MARTINI, S.; LAMAS, T. E.; SILVA, E. C. F. DA; LEITE, J. R.. Optical response at 1.3 mu m and 1.5 mu m with InAs quantum dots embedded in a pure GaAs matrix. Journal of Crystal Growth, v. 251, n. 1/4, p. 181-185, Apr. 2003. (99/08979-7, 99/10510-7, 01/14106-8)
MARTINI, S.; QUIVY, A. A.; SILVA, M. J. DA; LAMAS, T. E.; SILVA, E. C. F. DA; LEITE, J. R.; ABRAMOF, E.. Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction. Journal of Applied Physics, v. 94, n. 11, p. 7050-7052, Dec. 2003. (01/14106-8, 00/12529-6, 99/08979-7, 99/10510-7, 98/12779-0)
DUARTE, C. A.; SILVA, E. C. F. DA; QUIVY, A. A.; SILVA, M. J. DA; MARTINI, S.; LEITE, J. R.; MENESES, E. A.; LAURETO, E.. Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots. Journal of Applied Physics, v. 93, n. 10, p. 6279-6283, May 2003. (95/05651-0, 99/08979-7, 00/08794-6, 98/12779-0)
RUDNO-RUDZI{\’N}SKI‚ W.; RYCZKO‚ K.; S{\K{E}}K‚ G.; MISIEWICZ‚ J.; DA SILVA‚ MJ; QUIVY‚ AA. Photoreflectance study of energy level structure of self-assembled InAs/GaAs quantum dots emitting at 1.3 µm. Solid State Communications, v. 135, n. 4, p. 232-236, 2005. (02/10185-3, 98/12779-0)