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(Referência obtida automaticamente do Web of Science, por meio da informação sobre o financiamento pela FAPESP e o número do processo correspondente, incluída na publicação pelos autores.)

Improved photoluminescence emission and gas sensor properties of ZnO thin films

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Autor(es):
Berger, D. ; de Moura, A. P. ; Oliveira, L. H. ; Bastos, W. B. ; La Porta, F. A. ; Rosa, I. L. V. ; Li, M. S. ; Tebcherani, S. M. ; Longo, E. ; Varela, J. A.
Número total de Autores: 10
Tipo de documento: Artigo Científico
Fonte: CERAMICS INTERNATIONAL; v. 42, n. 12, p. 13555-13561, SEP 2016.
Citações Web of Science: 14
Resumo

In this article, we report a comparative study of the influence of pressure-assisted (1.72 MPa) versus ambient pressure thermal annealing on both ZnO thin films treated at 330 degrees C for 32 h. The effects of pressure on the structural, morphological, optical, and gas sensor properties of these thin films were investigated. The results show that partial preferential orientation of the wurtzite-structure ZnO thin films in the {[}002] or {[}101] planes is induced based on the thermal annealing conditions used (i.e., pressure assisted or ambient pressure). UV-vis absorption measurements revealed a negligible variation in the optical-band gap values for the both ZnO thin films. Consequently, it is deduced that the ZnO thin films exhibit different distortions of the tetrahedral {[}ZnO4] clusters, corresponding to different concentrations of deep and shallow level defects in both samples. This difference induced a variation of the interface/bulk-surface, which might be responsible for the enhanced optical and gas sensor properties of the pressure-assisted thermally annealed film. Additionally, pressure-assisted thermal annealing of the ZnO films improved the H-2 sensitivity by a factor of two. (C) 2016 Elsevier Ltd and Techna Group S.r.l. All rights reserved. (AU)

Processo FAPESP: 09/11099-2 - Preparação e caracterização de filmes finos de CaCu3Ti4O12 à alta pressão em substrato de silício com diferentes eletrodos
Beneficiário:Thiago Sequinel
Linha de fomento: Bolsas no Brasil - Doutorado
Processo FAPESP: 98/14324-0 - Multidisciplinary Center for Development of Ceramic Materials
Beneficiário:Elson Longo da Silva
Linha de fomento: Auxílio à Pesquisa - Centros de Pesquisa, Inovação e Difusão - CEPIDs