Busca avançada
Ano de início
Entree
(Referência obtida automaticamente do Web of Science, por meio da informação sobre o financiamento pela FAPESP e o número do processo correspondente, incluída na publicação pelos autores.)

Growth and Characterization of Graphene on Polycrystalline SiC Substrate Using Heating by CO2 Laser Beam

Texto completo
Autor(es):
de Almeida Maribondo Galvao, Nierlly Karinni ; de Vasconcelos, Getulio ; Ribeiro dos Santos, Marcos Valentim ; Bastos Campos, Tiago Moreira ; Pessoa, Rodrigo Savio ; Guerino, Marciel ; Djouadi, Mohamed Abdou ; Maciel, Homero Santiago
Número total de Autores: 8
Tipo de documento: Artigo Científico
Fonte: MATERIALS RESEARCH-IBERO-AMERICAN JOURNAL OF MATERIALS; v. 19, n. 6, p. 1329-1334, NOV-DEC 2016.
Citações Web of Science: 5
Resumo

The thermal decomposition of silicon carbide (SiC), with the subsequent formation of graphene, can be achieved by heating treatment. Several heating processes have been applied for this purpose by using SiC, either in form of powder particles or monocrystalline substrate. In this work, instead of using an expensive commercially available SiC wafer, a polycrystalline SiC substrate was obtained, based on powder metallurgy process, in order to explore the synthesis of graphene layers on its surface by using a CO2 laser beam as heating source. Different levels of energy density (fluence) were applied and Raman spectroscopy analyses demonstrated that graphene layers were formed on the polycrystalline SiC surface. The ratio of the integrated intensity of the D and G bands, and the crystallite size were calculated. The FWHM of the 2D band peaks are in excellent agreement with the range of values found in the literature. The samples irradiated with energy density of 138.4 J/cm(2) presented lower concentration of defects and higher crystallite size, while the lowest FWHM was obtained for energy density of 188 J/cm(2). The process occurred at room conditions and no gas flow was used. The results reveal a simple and cost-effective alternative for synthesis of graphene-based structures on SiC. (AU)

Processo FAPESP: 11/50773-0 - Núcleo de excelência em física e aplicações de plasmas
Beneficiário:Ricardo Magnus Osório Galvão
Linha de fomento: Auxílio à Pesquisa - Temático
Processo FAPESP: 11/07468-2 - Estudo da influência do tamanho da cadeia carbônica de grupos glicóis na cinética de cristalização de mulita
Beneficiário:Tiago Moreira Bastos Campos
Linha de fomento: Bolsas no Brasil - Doutorado