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(Referência obtida automaticamente do Web of Science, por meio da informação sobre o financiamento pela FAPESP e o número do processo correspondente, incluída na publicação pelos autores.)

Piezoelectric response and electrical properties of Pb(Zr1-xTix)O-3 thin films: The role of imprint and composition

Texto completo
Autor(es):
Cornelius, T. W. [1, 2] ; Mocuta, C. [3] ; Escoubas, S. [1] ; Merabet, A. [1] ; Texier, M. [1] ; Lima, E. C. [4] ; Araujo, E. B. [5] ; Kholkin, A. L. [6, 7, 8] ; Thomas, O. [1]
Número total de Autores: 9
Afiliação do(s) autor(es):
[1] Aix Marseille Univ, Univ Toulon, CNRS, IM2NP, Marseille - France
[2] Aix Marseille Univ, Fac Sci, UMR CNRS IM2NP 7334, Campus St Jerome Case 262 Ave Escadrille Normandi, F-13397 Marseille 20 - France
[3] Synchrotron SOLEIL, St Aubin BP 48, F-91192 Gif Sur Yvette - France
[4] Univ Fed Tocantins, BR-77500000 Porto Nacl, TO - Brazil
[5] Sao Paulo State Univ, UNESP, Sch Nat Sci & Engn, Dept Phys & Chem, BR-15385000 Ilha Solteira, SP - Brazil
[6] Univ Aveiro, Dept Phys, P-3810193 Aveiro - Portugal
[7] ITMO Univ, St Petersburg 197101 - Russia
[8] Univ Aveiro, CICECO Aveiro Inst Mat, P-3810193 Aveiro - Portugal
Número total de Afiliações: 8
Tipo de documento: Artigo Científico
Fonte: Journal of Applied Physics; v. 122, n. 16 OCT 28 2017.
Citações Web of Science: 4
Resumo

The compositional dependence of the piezoelectric properties of self-polarized PbZr1-xTixO3 (PZT) thin films deposited on Pt/TiO2/SiO2/Si substrates (x = 0.47, 0.49 and 0.50) was investigated by in situ synchrotron X-ray diffraction and electrical measurements. The latter evidenced an imprint effect in the studied PZT films, which is pronounced for films with the composition of x = 0.50 and tends to disappear for x = 0.47. These findings were confirmed by in situ X-ray diffraction along the crystalline {[}100] and {[}110] directions of the films with different compositions revealing asymmetric butterfly loops of the piezoelectric strain as a function of the electric field; the asymmetry is more pronounced for the PZT film with a composition of x = 0.50, thus indicating a higher built-in electric field. The enhancement of the dielectric permittivity and the effective piezoelectric coefficient at compositions around the morphotropic phase boundary were interpreted in terms of the polarization rotation mechanism and the monoclinic phase in the studied PZT thin films. Published by AIP Publishing. (AU)

Processo FAPESP: 10/16504-0 - Influência de fatores extrínsecos sobre as propriedades de filmes ultrafinos de PZT
Beneficiário:Eudes Borges de Araújo
Linha de fomento: Auxílio à Pesquisa - Regular