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(Referência obtida automaticamente do Web of Science, por meio da informação sobre o financiamento pela FAPESP e o número do processo correspondente, incluída na publicação pelos autores.)

Deformation Mechanisms of Vertically Stacked WS2/MoS2 Heterostructures: The Role of Interfaces

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Autor(es):
Susarla, Sandhya [1] ; Manimunda, Praveena [2] ; Jaques, Ygor Morais [1, 3, 4] ; Hachtel, Jordan A. [5] ; Idrobo, Juan Carlos [5] ; Amnulla, Syed Asif Syed [2] ; Galvao, Douglas Soares [3, 4] ; Tiwary, Chandra Sekhar [1, 6] ; Ajayan, Pulickel M. [1]
Número total de Autores: 9
Afiliação do(s) autor(es):
[1] Rice Univ, Mat Sci & Nanoengn, Houston, TX 77005 - USA
[2] Bruker Nano Surfaces, Minneapolis, MN 55344 - USA
[3] Univ Estadual Campinas, Appl Phys Dept, UNICAMP, BR-13083859 Campinas, SP - Brazil
[4] Univ Estadual Campinas, Ctr Computat Engn & Sci, BR-13083861 Campinas, SP - Brazil
[5] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 - USA
[6] Indian Inst Technol, Mat Sci & Engn, Gandhinagar 382355 - India
Número total de Afiliações: 6
Tipo de documento: Artigo Científico
Fonte: ACS NANO; v. 12, n. 4, p. 4036-4044, APR 2018.
Citações Web of Science: 10
Resumo

The mechanical and optical properties generated due to the stacking of different atomically thin materials have made it possible to tune and engineer these materials for next-generation electronics. The understanding of the interlayer interactions in such stacked structures is of fundamental interest for structure and property correlation. Here, a combined approach of in situ Raman spectroscopy and mechanical straining along with molecular dynamics (MD) simulations has been used to probe one such interface, namely, the WS2/MoS2 heterostructure. Vertical heterostructures on poly(methyl methacrylate), when flexed, showed signs of decoupling at 1.2% strain. Theoretical calculations showed strain induced stacking changes at 1.75% strain. The sliding characteristics of layers were also investigated using scanning probe microscopy based nanoscratch testing, and the results are further supported by MD simulations. The present study could be used to design future optoelectronic devices based on WS2/MoS2 heterostructures. (AU)

Processo FAPESP: 16/12341-5 - Efeitos de contaminantes na molhabilidade de materiais bi-dimensionais
Beneficiário:Ygor Morais Jaques
Linha de fomento: Bolsas no Exterior - Estágio de Pesquisa - Doutorado
Processo FAPESP: 13/08293-7 - CECC - Centro de Engenharia e Ciências Computacionais
Beneficiário:Munir Salomao Skaf
Linha de fomento: Auxílio à Pesquisa - Centros de Pesquisa, Inovação e Difusão - CEPIDs