| Texto completo | |
| Autor(es): |
Boratto, Miguel H.
[1, 2]
;
Congiu, Mirko
[1]
;
dos Santos, Stevan B. O.
[1]
;
Scalvi, Luis V. A.
[1, 2]
Número total de Autores: 4
|
| Afiliação do(s) autor(es): | [1] Sao Paulo State Univ Unesp, Sch Sci, Dept Phys, BR-17033360 Bauru, SP - Brazil
[2] Sao Paulo State Univ Unesp, Sch Sci, POSMAT Postgrad Program Mat Sci & Technol, BR-17033360 Bauru, SP - Brazil
Número total de Afiliações: 2
|
| Tipo de documento: | Artigo Científico |
| Fonte: | CERAMICS INTERNATIONAL; v. 44, n. 9, p. 10790-10796, JUN 15 2018. |
| Citações Web of Science: | 2 |
| Resumo | |
A study of zirconium oxide (ZrO2) thin films obtained by the non-alkoxide sol-gel method at different annealing temperatures, up to 450 degrees C, is presented. Morphological, compositional, and optical characterizations of zirconia thin films show high transparency and high bandgap, besides homogeneous and non-porous surface. Metal insulating-metal (MIM) devices were assembled from this zirconia material for electrical characterizations and have shown high electric resistivity and high specific capacitance. A study of the thin film composition shows residues of S and Cl elements from the precursor solution that contributes for reduction of the dielectric constant of the zirconia thin films, even though they still present higher values when compared to SiO2, which is a positive alternative to replace this oxide in electronic devices. A parallel study of MIM assembled on polymeric substrate and annealed at 100 degrees C also leads to positive results concerning high electrical insulating and capacitance. This study aims the understanding of the relations between annealing temperature and impurities found in sol-gel based thin films, as well as their relations to dielectric characteristics of zirconia thin films that impact the final properties of electronic devices, such as in field effect transistors. (AU) | |
| Processo FAPESP: | 16/16423-6 - Investigação do semicondutor óxido SnO2, na forma de filmes finos, e combinação com grafeno, visando aplicações tecnológicas |
| Beneficiário: | Stevan Brayan Oliveira dos Santos |
| Modalidade de apoio: | Bolsas no Brasil - Iniciação Científica |
| Processo FAPESP: | 16/17302-8 - Fabricação de memórias ReRAM a base de filmes finos de CuxS e COS |
| Beneficiário: | Mirko Congiu |
| Modalidade de apoio: | Bolsas no Brasil - Pós-Doutorado |