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(Referência obtida automaticamente do Web of Science, por meio da informação sobre o financiamento pela FAPESP e o número do processo correspondente, incluída na publicação pelos autores.)

Prediction of the electrical response of solution-processed thin-film transistors using multifactorial analysis

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Autor(es):
Braga, Joao P. [1] ; Moises, Lucas A. [2] ; Gozzi, Giovani [2] ; Fugikawa-Santos, Lucas [2]
Número total de Autores: 4
Afiliação do(s) autor(es):
[1] UNESP Sao Paulo State Univ, Phys Dept IBILCE, BR-15054000 Sao Jose Do Rio Preto, SP - Brazil
[2] UNESP Sao Paulo State Univ, Phys Dept IGCE, Av 24A, 1515, BR-13506900 Rio Claro, SP - Brazil
Número total de Afiliações: 2
Tipo de documento: Artigo Científico
Fonte: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS; v. 30, n. 18, SI, p. 16939-16948, SEP 2019.
Citações Web of Science: 0
Resumo

Thin-film transistors (TFTs) with the active layer composed by zinc oxide (ZnO) deposited via spray-pyrolysis present several advantages such as high electrical performance, high optical transmittance in the visible spectrum, low production cost and the ability to cover large areas. Besides the traditional application in electronic/optoelectronic circuits, ZnO TFTs can also be used in sensing devices due to its responsivity to UV-light. In the present work, we performed a bi-level full multifactorial analysis of TFT performance parameters exposed to UV-light. Characterization conditions like UV-light irradiance and time after UV exposure, as well as processing parameters such as annealing temperature were varied simultaneously, allowing the application of analysis of variance (ANOVA) to investigate the effect of these factors on the electrical performance of the devices. Field-effect mobility, threshold voltage, on/off current ratio and the device intrinsic current were among the parameters used as the responses in the factorial analysis. ANOVA was used to determine the ranking of significance of each factor on the different response parameters by the evaluation of the factor effects. Moreover, the results from ANOVA permitted the construction of linear functions used to predict the device responses in the whole range of the experimental conditions, which were confirmed by independent experimental results. The influence of factor interactions and of the linearization of some response parameters was also studied to improve the accuracy of TFT response prediction. (AU)

Processo FAPESP: 13/24461-7 - Estudo da influência do controle de atmosfera no desempenho de transistores de filme fino para aplicações em circuitos transparentes e/ou flexíveis
Beneficiário:Lucas Fugikawa Santos
Linha de fomento: Auxílio à Pesquisa - Regular
Processo FAPESP: 14/50869-6 - INCT 2014: em Eletrônica Orgânica INEO
Beneficiário:Roberto Mendonça Faria
Linha de fomento: Auxílio à Pesquisa - Temático