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(Referência obtida automaticamente do SciELO, por meio da informação sobre o financiamento pela FAPESP e o número do processo correspondente, incluída na publicação pelos autores.)

Local order structure of a-SiOxNy:H grown by PECVD

Texto completo
Autor(es):
W.L. Scopel ; M.C.A. Fantini ; M.I. Alayo ; I. Pereyra
Número total de Autores: 4
Tipo de documento: Artigo Científico
Fonte: Brazilian Journal of Physics; v. 32, n. 2a, p. 366-368, Jun. 2002.
Resumo

In this work we study the structural properties of amorphous oxynitride films (a-SiOxNy), grown by plasma enhanced chemical vapour deposition (PECVD)at 320° C. The films were deposited at different ow ratio of N2O and SiH4. The atomic composition of the samples was determined by means of Rutherford backscattering spectrometry (RBS). The local order structure was studied by X-ray absorption spectroscopy (XAS) and the chemical bondings were investigated by Fourier transform infrared (FTIR) spectroscopy. The results evidence a tetrahedric arrangement of the oxynitride network. The tetrahedrons are similiar to SiO3N for x values between 1.43 and 1.64. For x values higher than 1.64 the tetrahedrons are similar to SiO4. (AU)

Processo FAPESP: 98/09806-6 - Propriedades eletrônicas e estruturais de óxido e oxi-nitreto de silício amorfo hidrogenado
Beneficiário:Wanderlã Luis Scopel
Linha de fomento: Bolsas no Brasil - Doutorado