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(Referência obtida automaticamente do Web of Science, por meio da informação sobre o financiamento pela FAPESP e o número do processo correspondente, incluída na publicação pelos autores.)

Hysteresis-free deposition of TiOxNy thin films: Effect of the reactive gas mixture and oxidation of the TiN layers on process control

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Autor(es):
Duarte, D. A. [1] ; Massi, M. [1, 2] ; Sagas, J. C. [1] ; da Silva Sobrinho, A. S. [1] ; Irala, D. R. [1, 3] ; Fontana, L. C. [4]
Número total de Autores: 6
Afiliação do(s) autor(es):
[1] Technol Inst Aeronaut, Plasmas & Proc Lab, BR-12228900 Sao Jose Dos Campos, SP - Brazil
[2] Univ Fed Sao Paulo, Inst Sci & Technol, BR-12231280 Sao Jose Dos Campos, SP - Brazil
[3] Catholic Santa Catarina, BR-89203005 Joinville, SC - Brazil
[4] Santa Catarina State Univ, Plasma Phys Lab, BR-89219710 Joinville, SC - Brazil
Número total de Afiliações: 4
Tipo de documento: Artigo Científico
Fonte: VACUUM; v. 101, n. SI, p. 200-204, MAR 2014.
Citações Web of Science: 4
Resumo

This paper investigates the effect of the reactive gas mixture (N-2 + O-2 + Ar) and oxidation of the nitride layers on the system stability during the reactive sputter deposition of TiOxNy thin films. The present research is an extension of previous investigations conducted by Severin et al. (Appl. Phys. Lett., 88 (2006) 161504) and Duarte et al. (Appl. Surf. Sci., 269 (2013) 55-59) in which the Berg's model was used. to study reactive deposition of oxynitrides. The results show that the addition of N-2 to the process avoids the formation of a hysteresis loop and facilitates the deposition of films with fractions of TiO2 at any value. These achievements are not possible without this procedure. In contrast, despite eliminating plasma instabilities, the addition of N-2 decreases the mass deposition rate due to the modifications in the sputtering yield. Other results show that the oxidation of TiN also plays a key role in the mass deposition rate and in the hysteresis loop. (C) 2013 Elsevier Ltd. All rights reserved. (AU)

Processo FAPESP: 11/50773-0 - Núcleo de excelência em física e aplicações de plasmas
Beneficiário:Ricardo Magnus Osório Galvão
Linha de fomento: Auxílio à Pesquisa - Temático