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(Referência obtida automaticamente do Web of Science, por meio da informação sobre o financiamento pela FAPESP e o número do processo correspondente, incluída na publicação pelos autores.)

Development of Dye-Sensitized Solar Cells with Sputtered N-Doped TiO2 Thin Films: From Modeling the Growth Mechanism of the Films to Fabrication of the Solar Cells

Texto completo
Autor(es):
Duarte, D. A. [1] ; Massi, M. [1, 2] ; da Silva Sobrinho, A. S. [1]
Número total de Autores: 3
Afiliação do(s) autor(es):
[1] Technol Inst Aeronaut, Plasmas & Proc Lab, BR-12228900 Sao Jose Dos Campos, SP - Brazil
[2] Univ Fed Sao Paulo, Inst Sci & Technol, BR-12245000 Sao Jose Dos Campos, SP - Brazil
Número total de Afiliações: 2
Tipo de documento: Artigo Científico
Fonte: INTERNATIONAL JOURNAL OF PHOTOENERGY; 2014.
Citações Web of Science: 7
Resumo

In this paper, nitrogen-doped TiO2 thin films were deposited by DC reactive sputtering at different doping levels for the development of dye-sensitized solar cells. The mechanism of film growth during the sputtering process and the effect of the nitrogen doping on the structural, optical, morphological, chemical, and electronic properties of the TiO2 were investigated by numerical modeling and experimental methods. The influence of the nitrogen doping on the working principle of the prototypes was investigated by current-voltage relations measured under illuminated and dark conditions. The results indicate that, during the film deposition, the control of the oxidation processes of the nitride layers plays a fundamental role for an effective incorporation of substitutional nitrogen in the film structure and cells built with nitrogen-doped TiO2 have higher short-circuit photocurrent in relation to that obtained with conventional DSSCs. On the other hand, DSSCs built with nondoped TiO2 have higher open-circuit voltage. These experimental observations indicate that the incorporation of nitrogen in the TiO2 lattice increases simultaneously the processes of generation and destruction of electric current. (AU)

Processo FAPESP: 11/50773-0 - Núcleo de excelência em física e aplicações de plasmas
Beneficiário:Ricardo Magnus Osório Galvão
Linha de fomento: Auxílio à Pesquisa - Temático