Radiation Hardness of GaN HEMTs to TID Effects: COTS for harsh environments

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Vilas Boas, Alexis C. ; de Melo, M. A. A. ; Santos, R. B. B. ; Giacomini, R. ; Medina, N. H. ; Seixas, L. E. ; Finco, S. ; Palomo, F. R. ; Romero-Maestre, A. ; Guazzelli, Marcilei A. ; IEEE

• Tipo de documento: Artigo Científico
• Fonte: 2019 19TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS); v. N/A, p. 4-pg., 2022-01-01.

Resumo

The COTS power transistors based in GaN were exposed to TID effects by 10-keV X-rays. These HEMTs were tested in the On- and Off-state bias-condition. Switching tests were performed before, during and after irradiation. The devices were characterized at temperatures ranging from -50 degrees C to +75 degrees C. The results indicate that the GaN-technology is a great candidate to be used in harsh environments. (AU)

• Processo FAPESP: 12/03383-5 - Desenvolvimento de metodologia de ensaios de radiação em componentes eletrônicos
• Beneficiário: Nilberto Heder Medina
• Modalidade de apoio: Auxílio à Pesquisa - Regular