| Texto completo | |
| Autor(es): Mostrar menos - |
Vilas Boas, Alexis C.
;
de Melo, M. A. A.
;
Santos, R. B. B.
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Giacomini, R.
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Medina, N. H.
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Seixas, L. E.
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Finco, S.
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Palomo, F. R.
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Romero-Maestre, A.
;
Guazzelli, Marcilei A.
;
IEEE
Número total de Autores: 11
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| Tipo de documento: | Artigo Científico |
| Fonte: | 2019 19TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS); v. N/A, p. 4-pg., 2022-01-01. |
| Resumo | |
The COTS power transistors based in GaN were exposed to TID effects by 10-keV X-rays. These HEMTs were tested in the On- and Off-state bias-condition. Switching tests were performed before, during and after irradiation. The devices were characterized at temperatures ranging from -50 degrees C to +75 degrees C. The results indicate that the GaN-technology is a great candidate to be used in harsh environments. (AU) | |
| Processo FAPESP: | 12/03383-5 - Desenvolvimento de metodologia de ensaios de radiação em componentes eletrônicos |
| Beneficiário: | Nilberto Heder Medina |
| Modalidade de apoio: | Auxílio à Pesquisa - Regular |