Investigation of InGaAs/InP photodiode surface passivation using epitaxial regrowth of InP via photoluminescence and photocurrent

Autor(es)

Braga, O. M. ; Delfino, C. A. ; Kawabata, R. M. S. ; Pinto, L. D. ; Vieira, G. S. ; Pires, M. P. ; Souza, P. L. ; Marega, E. ; Carlin, J. A. ; Krishna, S.

• Tipo de documento: Artigo Científico
• Fonte: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING; v. 154, p. 7-pg., 2023-02-01.

Resumo

The viability of epitaxial regrowth of InP to passivate lateral mesa surfaces of lattice-matched InGaAs/InP photodiodes is investigated. The effect of the passivation is quantified via a proposed method that uses multi-wavelength photoluminescence to determine the surface recombination velocity (SRV). The effective minority charge lateral diffusion length is also obtained using photocurrent measurements with flood illumination. We propose a methodology where this data can be used together with the SRV to estimate the absorber layer minority charge lifetime. A surface recombination velocity of (3.7 +/- 0.1) x 10(4) cms(-1) was found for the InGaAs/ regrown InP interface, which represents a reduction of 2 orders of magnitude when compared to the value of (6.3 +/- 0.1) x 10(6) cms(-1) obtained for an unpassivated InGaAs surface. (AU)

• Processo FAPESP: 16/05516-3 - Desenvolvimento de processos de fabricação de matrizes de sensores de infravermelho
• Beneficiário: Gustavo Soares Vieira
• Modalidade de apoio: Bolsas no Exterior - Pesquisa