| Texto completo | |
| Autor(es): |
Kumar, Hardeep
;
Morelhao, Sergio L.
;
Pessotto, Gerson
;
Singh, Hardepinder
;
Sinha, Anil K.
;
Cornejo, Daniel R.
Número total de Autores: 6
|
| Tipo de documento: | Artigo Científico |
| Fonte: | Journal of Magnetism and Magnetic Materials; v. 556, p. 8-pg., 2022-05-11. |
| Resumo | |
FeRh thin films are grown on MgO(0 0 1), MgO(0 1 1) and MgO(1 1 1) single-crystal substrates at 600 degrees C by dc magnetron sputtering and post-annealed at the same temperature for 1 h. Effect of substrate orientation on structural and magnetic properties of FeRh films is studied using X-ray diffraction (Cu-K alpha and synchrotron radiation), temperature, and field dependent magnetization measurements. FeRh(0 0 1), (1 1 2), (0 1 1) orientated films with CsCl ordering are obtained on MgO(0 0 1), MgO(0 1 1) and MgO(1 1 1) substrates, respectively. Epitaxial quality of FeRh(0 0 1) is relatively better than FeRh(1 1 2) and FeRh(0 1 1) films. The FeRh(0 1 1) film grows on two orientation relationships: Nishiyama-Wassermann (NW) and Kurdjumov-Sachs (KS). Temperaturedependent out-plane XRD measurements indicate an increase in c-parameter -0.56% to 0.62% across the AF-FM phase transition. The c/a ratio indicate that FeRh(0 0 1) film has in-plane compressive strain, while FeRh(1 1 2) and FeRh(0 1 1) films have tensile strain. The c/a ratio and temperature-dependent magnetization measurements (M-T) indicate that AF-FM phase transition can be tuned by appx. 52 K (388 K to 440 K) by variation of lattice strain at FeRh/MgO interface. Thermal hysteresis of appx. 12.8 K, 17 K and 22.9 K is observed for FeRh(0 0 1), FeRh(1 1 2) and FeRh(0 1 1) thin films. Larger thermal hysteresis is expected due to relatively poor epitaxial quality of the FeRh(1 1 2) and FeRh(0 1 1) films as compared to FeRh(0 0 1) film. The larger remnant FM component is observed in nominal AF state (room temperature) in all the samples, and is expected due to combined effect of composition inhomogeneity, substrate-induced strain and defects. (AU) | |
| Processo FAPESP: | 10/18590-0 - NANOMAGNETISMO EM SISTEMAS DE BAIXA DIMENSIONALIDADE BASEADOS EM FeRh: PÓS NANOESTRUTURADOS, NANOFIOS E FILMES FINOS |
| Beneficiário: | Hardeep Kumar |
| Modalidade de apoio: | Bolsas no Brasil - Pós-Doutorado |