New Hybrid Generation of Layout Styles to Boost the Electrical, Energy, and Frequency Response Performances of Analog MOSFETs

Autor(es)

Salerno Galembeck, Egon Henrique ; Gimenez, Salvador Pinillos

• Tipo de documento: Artigo Científico
• Fonte: IEEE TRANSACTIONS ON ELECTRON DEVICES; v. 69, n. 6, p. 9-pg., 2022-04-28.

Resumo

It is known that the hexagonal (Diamond) layout style is capable of boosting the electrical performance and ionizing radiation tolerances of metal-oxide-semiconductor field-effect-transistors (MOSFETs). In order to further improve the figures of merit of these devices, it was proposed a hybrid gate geometry that is an evolution of the hexagonal layout style, entitled Half-Diamond. This innovative layout style is able to generate the same electrical effects that the Diamond is able to generate, and it is innovative because it is capable of further reducing the effective channel lengths of MOSFETs implemented with Diamond and rectangular layout styles. Thus, this work describes a comparative study by 3-D numerical simulations data and experimental data between the MOSFETs implemented with the Half-Diamond and Conventional layout styles. The main results found have indicated that the saturation drain current and transconductance of MOSFET layouted with Half-Diamond are 36% and 27% higher, respectively, than those measured in the Conventional MOSFET. Other results have shown that the innovative half-diamond layout style (HDLS) for MOSFETs is capable of reducing the dissipated electrical power in approximately 62% and, therefore, it is an alternative hardness-by-design strategy to remarkably improve complementary metal-oxide-semiconductor (CMOS) integrated circuits (ICs) energy efficiency. Besides, the electrical behaviors of longitudinal corner effect (LCE), parallel connection of MOSFETs with different channel lengths effect (PAMDLE), and deactivation of parasitic MOSFETs in the bird's beak regions effect (DEPAMBBRE) of the MOSFETs implemented with the HDLS are studied in detail to justify the results found. (AU)

• Processo FAPESP: 17/10718-7 - Estudo Experimental do comportamento elétrico do MOSFET do tipo elipsoidal submetido em ambientes de ALTAS TEMPERATURAS
• Beneficiário: Egon Henrique Salerno Galembeck
• Modalidade de apoio: Bolsas no Brasil - Doutorado