Dipole behavior in thin film heterostructure composed of Er-doped SnO2 and GaAs: Influence of polarization bias, temperature and stray light

Autor(es)

Russo, Fabricio T. ; Machado, Diego H. O. ; Scalvi, Luis V. A.

• Tipo de documento: Artigo Científico
• Fonte: Chemical Physics; v. 573, p. 10-pg., 2023-06-29.

Resumo

The heterostructure system GaAs/SnO2 is built by resistive evaporation of Er-doped SnO2 powder on the top of GaAs semi-insulating substrate. The SnO2 powder comes from the drying of SnO2 sol-gel solution. The possible formation of dipoles in this heterostructure is investigated by the thermally stimulated depolarization current (TSDC) technique, and the possibilities for dipole formation are explored, such as the EL2 defect in the GaAs side, oxygen vacancies and Er ions in the SnO2 layer. The dipole relaxation activation energies are found in the range 0.2 eV to 0.3 eV, in good agreement with the ionization energies of these defects. The main TSDC bands: 213 meV with peak of-298 pA, for positive bias, and 218 meV with peak of 128 pA for negative bias, are modified by stray (room) light, which may correspond to the second ionization level of oxygen vacancies in SnO2, which are excited by the room lights and do not return to the original orientation. (AU)

• Processo FAPESP: 16/12216-6 - Heterojunções de SnO2 para aplicações em dispositivos optoeletrônicos: 1) GaAs/SnO2, 2) grafeno/SnO2
• Beneficiário: Diego Henrique de Oliveira Machado
• Modalidade de apoio: Bolsas no Brasil - Doutorado