| Texto completo | |
| Autor(es): |
Gusev, G. M.
;
Jaroshevich, A. S.
;
Levin, A. D.
;
Kvon, Z. D.
;
Bakarov, A. K.
Número total de Autores: 5
|
| Tipo de documento: | Artigo Científico |
| Fonte: | PHYSICAL REVIEW B; v. 103, n. 7, p. 7-pg., 2021-02-10. |
| Resumo | |
We observe a large negative magnetoresistance and a decrease of resistivity with increasing temperature, known as the Gurzhi effect, in a bilayer (BL) electron system formed by a wide GaAs quantum well. A hydrodynamic model for the single fluid transport parameters in narrow channels is employed and successfully describes our experimental findings. We find that the electron-electron scattering in the bilayer is more intensive in comparison with a single-band well (SW). The hydrodynamic assumption implies a strong dependence on boundary conditions, which can be characterized by slip length, describing the behavior of a liquid near the edge. Our results reveal that slip length in a BL is shorter than in a SW, and that the BL system goes deeper into the hydrodynamic regime. This is in agreement with the model proposed where the slip length is of the order of the electron-electron mean free path. (AU) | |
| Processo FAPESP: | 17/21340-5 - Propriedades de transporte em sistemas 2D sob irradiação de micro-ondas |
| Beneficiário: | Gennady Gusev |
| Modalidade de apoio: | Auxílio à Pesquisa - Pesquisador Visitante - Internacional |
| Processo FAPESP: | 15/16191-5 - Pesquisas em novos materiais envolvendo campos magnéticos intensos e baixas temperaturas |
| Beneficiário: | Gennady Gusev |
| Modalidade de apoio: | Auxílio à Pesquisa - Temático |