| Texto completo | |
| Autor(es): |
Duarte, V. G. M.
;
da Costa, D. R.
;
Peres, N. M. R.
;
Teles, L. K.
;
Chaves, A. J.
Número total de Autores: 5
|
| Tipo de documento: | Artigo Científico |
| Fonte: | PHYSICAL REVIEW B; v. 110, n. 3, p. 15-pg., 2024-07-03. |
| Resumo | |
Using the tight-binding model, we report a gap opening in the energy spectrum of a twisted bilayer graphene under the application of pressure, that can be further amplified by the presence of a perpendicular bias voltage. The valley edges are located along the K-Gamma path of the superlattice Brillouin zone, with the band gap reaching values up to 200 meV in the single-particle picture. Employing the formalism of the semiconductor Bloch equations, we observe an enhancement of the band gap due to the electron-electron interaction, with a renormalization of the band gap of about 160 meV. From the solution of the corresponding Bethe-Salpeter equation, we show that this system supports highly anisotropic bright excitons whose electrons and holes are strongly hybridized between the adjacent layers. (AU) | |
| Processo FAPESP: | 22/08086-0 - Polaritons, excitons e trions em heteroestruturas de van der Waals |
| Beneficiário: | André Jorge Carvalho Chaves |
| Modalidade de apoio: | Auxílio à Pesquisa - Regular |