| Texto completo | |
| Autor(es): |
da Costa, Fernando Jose
;
Zeinati, Aseel
;
Trevisoli, Renan
;
Misra, Durga
;
Doria, Rodrigo Trevisoli
Número total de Autores: 5
|
| Tipo de documento: | Artigo Científico |
| Fonte: | IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY; v. 12, p. 7-pg., 2024-01-01. |
| Resumo | |
The objective of this work is to present a comparison of the switching properties in Resistive Random-Access-Memory between two different switching layer devices through the capacitance measurements. The analysis was carried out in two devices with different insulating layers, one composed of H-plasma-treated HfO(2 )and another with a stoichiometric HfO2. The device with a higher quantity of oxygen vacancy-related defects in the insulator (HfO2 w/trt) presents a wider spread of the capacitance with the application of a range of varying pulse widths. An increase in the capacitance from 3.904 to 3.917 pF/mu m(2) was observed for the same device when it was subjected to a 144 mu s pulse width, demonstrating a conductance quantization required for the application in in-memory computing systems. Also, the dielectric constant modulates due to the migration of oxygen atoms inside the device's insulator. (AU) | |
| Processo FAPESP: | 23/14970-3 - Caracterização Elétrica, Simulação e Fabricação de Memórias Resistivas de Acesso Aleatório - ReRAMs |
| Beneficiário: | Fernando José da Costa |
| Modalidade de apoio: | Bolsas no Brasil - Pós-Doutorado |