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Strongly correlated transport in topological Y-junction devices

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Autor(es):
Novais, E.
Número total de Autores: 1
Tipo de documento: Artigo Científico
Fonte: PHYSICAL REVIEW B; v. 112, n. 11, p. 14-pg., 2025-09-02.
Resumo

I analyze electron transport through a Y junction formed by helical edge states of a two-dimensional topological insulator (2DTI), focusing on the strongly interacting regime. An experimentally motivated device geometry and a spin-conserving tunneling Hamiltonian are proposed. I compute the conductance tensor and show that, for specific tunneling phases and strong repulsive interactions (g < 1/2), transport is governed by an intermediate renormalization group fixed point that interpolates between the weak-and strong-tunneling limits. These results extend previous studies of point-contact tunneling and demonstrate how interactions qualitatively modify the transport properties of multiterminal topological devices. (AU)

Processo FAPESP: 22/15453-0 - Materiais quânticos correlacionados
Beneficiário:Eduardo Miranda
Modalidade de apoio: Auxílio à Pesquisa - Temático