| Texto completo | |
| Autor(es): |
de Souza, Adelcio M.
;
Celino, Daniel R.
;
Ragi, Regiane
;
Romero, Murilo A.
Número total de Autores: 4
|
| Tipo de documento: | Artigo Científico |
| Fonte: | IEEE OPEN JOURNAL OF NANOTECHNOLOGY; v. 6, p. 11-pg., 2025-01-01. |
| Resumo | |
This paper describes device models for the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of ballistic nanotransistors based on two-dimensional (2D) materials. The proposed methodology introduces a novel, fully analytical, and explicit approach grounded in fundamental physical principles. This approach enables seamless integration into circuit simulators and provides clear insight into device operation. In contrast to the drift-diffusion models commonly found in the literature, this approach accurately describes the ballistic transport regime observed in state-of-the-art 2D nanotransistors. The proposed model was validated against both experimental and ab initio numerical simulations from the literature for devices based on molybdenum disulfide (MoS2) and indium selenide (InSe). The results show excellent agreement with the reference datasets, confirming the model's accuracy and its suitability for designing advanced nanoelectronic devices and circuits. (AU) | |
| Processo FAPESP: | 21/06569-1 - Tecnologias estratégicas para internet de alta velocidade |
| Beneficiário: | Evandro Conforti |
| Modalidade de apoio: | Auxílio à Pesquisa - Temático |
| Processo FAPESP: | 24/04319-6 - Projeto e caracterização de Circuitos Integrados Fotônicos (PICs) para uso no fronthaul óptico de sistemas 6G |
| Beneficiário: | Adelcio Marques de Souza |
| Modalidade de apoio: | Bolsas no Brasil - Programa Capacitação - Treinamento Técnico |
| Processo FAPESP: | 18/13537-6 - Modelagem compacta de transistores MOS baseados em efeitos quânticos |
| Beneficiário: | Adelcio Marques de Souza |
| Modalidade de apoio: | Bolsas no Brasil - Doutorado |