Electronic structure and mechanical properties of plasma nitrided ferrous alloys

Autor(es)

Portolan, E. ^[1] ; Baumvol, I. J. R. ^{[1, 2]} ; Figueroa, C. A. ^[1]

Afiliação do(s) autor(es)

^[1] Univ Caxias do Sul, Ctr Ciencias Exatas & Tecnol, BR-95070560 Caxias Do Sul, RS - Brazil

^[2] Univ Fed Rio Grande do Sul, Inst Fis, BR-91509970 Porto Alegre, RS - Brazil

• Tipo de documento: Artigo Científico
• Fonte: Applied Surface Science; v. 255, n. 13-14, p. 6661-6665, APR 15 2009.
• Citações Web of Science: 1

Resumo

The electronic structures of the near-surface regions of two different nitrided steels (AISI 316 and 4140) were investigated using X-ray photoelectron spectroscopy. Photoelectron groups from all main chemical elements involved were addressed for steel samples with implanted-N concentrations in the range 16-32 at.%. As the implanted-N concentrations were increased, rather contrasting behaviors were observed for the two kinds of steel. The N1s photoelectrons had spectral shifts toward lower (nitrided AISI 316) or higher (nitrided AISI 4140) binding energies, whereas the Fe2p(3/2) photoelectron spectrum remains at a constant binding energy (nitrided AISI 316) or shifts toward higher binding energies (AISI 4140). These trends are discussed in terms of the metallic nitride formation and the overlapping of atomic orbitals. For nitrided AISI 316, a semi-classical approach of charge transfer between Cr and N is used to explain the experimental facts (formation of CrN), while for nitrided AISI 4140 we propose that the interaction between orbitals 4s from Fe and 2p from N promotes electrons to the conduction band increasing the electrical attraction of the N1s and Fe2p electrons in core shells (formation of FeN(x)). The increase in hardness of the steel upon N implantation is attributed to the localization of electrons in specific bonds, which diminishes the metallic bond character. (C) 2009 Elsevier B. V. All rights reserved. (AU)

• Processo FAPESP: 97/12069-0 - Propriedades estruturais, ópticas e de transporte em semicondutores amorfos
• Beneficiário: Fernando Alvarez
• Modalidade de apoio: Auxílio à Pesquisa - Temático