| Texto completo | |
| Autor(es): |
Aragon, F. H.
[1, 2]
;
Coaquira, J. A. H.
[1]
;
Villegas-Lelovsky, L.
[1]
;
da Silva, S. W.
[1]
;
Cesar, D. F.
[3]
;
Nagamine, L. C. C. M.
[4]
;
Cohen, R.
[4]
;
Menendez-Proupin, E.
[5]
;
Morais, P. C.
[1, 6]
Número total de Autores: 9
|
| Afiliação do(s) autor(es): | [1] Univ Brasilia, Inst Fis, BR-70910900 Brasilia, DF - Brazil
[2] Ctr Desenvolvimento Tecnol Nucl, Lab Fis Aplicada, BR-3127901 Belo Horizonte, MG - Brazil
[3] Univ Fed Sao Carlos, Dept Fis, BR-13565905 Sao Carlos, SP - Brazil
[4] Univ Sao Paulo, Inst Fis, BR-05508090 Sao Paulo, SP - Brazil
[5] Univ Chile, Fac Ciencias, Dept Fis, Santiago 7800003 - Chile
[6] Huazhong Univ Sci & Technol, Sch Automat, Wuhan 430074 - Peoples R China
Número total de Afiliações: 6
|
| Tipo de documento: | Artigo Científico |
| Fonte: | JOURNAL OF PHYSICS-CONDENSED MATTER; v. 27, n. 9 MAR 11 2015. |
| Citações Web of Science: | 11 |
| Resumo | |
In this study, we report on the structural and hyperfine properties of Al-doped SnO2 nanoparticles synthesized by a polymer precursor method. The x-ray diffraction data analysis carried out using the Rietveld refinement method shows the formation of only rutile-type structures in all samples, with decreasing of the mean crystallite size as the Al content. A systematic study of the unit cell, as well as the vicinity of the interstitial position show strong evidence of two doping regimes in the rutile-type structure of SnO2. Below 7.5 mol% doping a dominant substitutional solution of Al+3 and Sn4+-ions is determined. However, the occupation of both substitutional and interstitial sites is determined above 7.5 mol% doping. These findings are in good agreement with theoretical ab initio calculations. (AU) | |
| Processo FAPESP: | 11/50556-0 - Propriedades magnéticas e estruturais de nanopartículas de ferritas (Fe2O3 e CoFe2O4), SnO2 e CO |
| Beneficiário: | Luiz Carlos Camargo Miranda Nagamine |
| Linha de fomento: | Auxílio à Pesquisa - Regular |
| Processo FAPESP: | 11/17944-6 - Novos sistemas nano-ópticos e dispositivos nano-eletrônicos: caracterização e aplicação |
| Beneficiário: | Daniel Ferreira Cesar |
| Linha de fomento: | Bolsas no Brasil - Pós-Doutorado |