Evolution of the doping regimes in the Al-doped SnO2 nanoparticles prepared by a polymer precursor method

Autor(es)

Aragon, F. H. ^{[1, 2]} ; Coaquira, J. A. H. ^[1] ; Villegas-Lelovsky, L. ^[1] ; da Silva, S. W. ^[1] ; Cesar, D. F. ^[3] ; Nagamine, L. C. C. M. ^[4] ; Cohen, R. ^[4] ; Menendez-Proupin, E. ^[5] ; Morais, P. C. ^{[1, 6]}

Afiliação do(s) autor(es)

^[1] Univ Brasilia, Inst Fis, BR-70910900 Brasilia, DF - Brazil

^[2] Ctr Desenvolvimento Tecnol Nucl, Lab Fis Aplicada, BR-3127901 Belo Horizonte, MG - Brazil

^[3] Univ Fed Sao Carlos, Dept Fis, BR-13565905 Sao Carlos, SP - Brazil

^[4] Univ Sao Paulo, Inst Fis, BR-05508090 Sao Paulo, SP - Brazil

^[5] Univ Chile, Fac Ciencias, Dept Fis, Santiago 7800003 - Chile

^[6] Huazhong Univ Sci & Technol, Sch Automat, Wuhan 430074 - Peoples R China

• Tipo de documento: Artigo Científico
• Fonte: JOURNAL OF PHYSICS-CONDENSED MATTER; v. 27, n. 9 MAR 11 2015.
• Citações Web of Science: 11

Resumo

In this study, we report on the structural and hyperfine properties of Al-doped SnO2 nanoparticles synthesized by a polymer precursor method. The x-ray diffraction data analysis carried out using the Rietveld refinement method shows the formation of only rutile-type structures in all samples, with decreasing of the mean crystallite size as the Al content. A systematic study of the unit cell, as well as the vicinity of the interstitial position show strong evidence of two doping regimes in the rutile-type structure of SnO2. Below 7.5 mol% doping a dominant substitutional solution of Al+3 and Sn4+-ions is determined. However, the occupation of both substitutional and interstitial sites is determined above 7.5 mol% doping. These findings are in good agreement with theoretical ab initio calculations. (AU)

• Processo FAPESP: 11/50556-0 - Propriedades magnéticas e estruturais de nanopartículas de ferritas (Fe2O3 e CoFe2O4), SnO2 e CO
• Beneficiário: Luiz Carlos Camargo Miranda Nagamine
• Modalidade de apoio: Auxílio à Pesquisa - Regular
• Processo FAPESP: 11/17944-6 - Novos sistemas nano-ópticos e dispositivos nano-eletrônicos: caracterização e aplicação
• Beneficiário: Daniel Ferreira Cesar
• Modalidade de apoio: Bolsas no Brasil - Pós-Doutorado