Carrier transfer in vertically stacked quantum ring-quantum dot chains

Autor(es):Mostrar menos -

Mazur, Yu. I. ^[1] ; Lopes-Oliveira, V. ^[2] ; de Souza, L. D. ^{[2, 1]} ; Lopez-Richard, V. ^[2] ; Teodoro, M. D. ^[2] ; Dorogan, V. G. ^[1] ; Benamara, M. ^[1] ; Wu, J. ^[3] ; Tarasov, G. G. ^[4] ; Marega, Jr., E. ^[5] ; Wang, Z. M. ^[3] ; Marques, G. E. ^[2] ; Salamo, G. J. ^[1]

Afiliação do(s) autor(es)

^[1] Univ Arkansas, Arkansas Inst Nanoscale Mat Sci & Engn, Fayetteville, AR 72701 - USA

^[2] Univ Fed Sao Carlos, Dept Fis, BR-13565905 Sao Carlos, SP - Brazil

^[3] Univ Elect Sci & Technol China, State Key Lab Elect Thin Film & Integrated Device, Chengdu 610054 - Peoples R China

^[4] Natl Acad Sci, Inst Semicond Phys, UA-03028 Kiev - Ukraine

^[5] Univ Sao Paulo, Inst Fis Sao Carlos, BR-13566590 Sao Carlos, SP - Brazil

• Tipo de documento: Artigo Científico
• Fonte: Journal of Applied Physics; v. 117, n. 15 APR 21 2015.
• Citações Web of Science: 8

Resumo

The interplay between structural properties and charge transfer in self-assembled quantum ring (QR) chains grown by molecular beam epitaxy on top of an InGaAs/GaAs quantum dot (QD) superlattice template is analyzed and characterized. The QDs and QRs are vertically stacked and laterally coupled as well as aligned within each layer due to the strain field distributions that governs the ordering. The strong interdot coupling influences the carrier transfer both along as well as between chains in the ring layer and dot template structures. A qualitative contrast between different dynamic models has been developed. By combining temperature and excitation intensity effects, the tuning of the photoluminescence gain for either the QR or the QD mode is attained. The information obtained here about relaxation parameters, energy scheme, interlayer and interdot coupling resulting in creation of 1D structures is very important for the usage of such specific QR-QD systems for applied purposes such as lasing, detection, and energy-harvesting technology of future solar panels. (C) 2015 AIP Publishing LLC. (AU)

• Processo FAPESP: 13/18719-1 - Dinâmica de portadores eletrônicos em nanoestruturas semicondutoras
• Beneficiário: Marcio Daldin Teodoro
• Modalidade de apoio: Auxílio à Pesquisa - Jovens Pesquisadores
• Processo FAPESP: 12/02655-1 - Sistemas nano-ópticos e dispositivos nano-eletrônicos
• Beneficiário: Victor Lopez Richard
• Modalidade de apoio: Auxílio à Pesquisa - Regular
• Processo FAPESP: 14/07375-2 - EMU concedido no projeto 2013/18719-1: sistema de medidas resolvidas no tempo
• Beneficiário: Marcio Daldin Teodoro
• Modalidade de apoio: Auxílio à Pesquisa - Programa Equipamentos Multiusuários