Effect of traps localization in ZnO thin films by photoluminescence spectroscopy

Autor(es)

Onofre, Y. J. ; de Castro, S. ; de Godoy, M. P. F.

• Tipo de documento: Artigo Científico
• Fonte: Materials Letters; v. 188, p. 37-40, FEB 1 2017.
• Citações Web of Science: 9

Resumo

We report an anomalous effect on photoluminescence emission of disordered ZnO films related to the increase of optical emission as temperature increases. In order to verify the origin of this effect, the ZnO film was annealed up to 500 degrees C and its PL emissions exhibited the expected Arrhenius behavior. We attribute this effect to the presence of traps that behave as potential fluctuations responsible for localizing the photogenerated carriers. These traps are originated from the disorder present in the as-grown sample and act in a temperature range associated to the depth of fluctuations. The influence of traps occurs up to a critical temperature T-c associated to deepest trap level which is around tens of meV for ZnO. (AU)

• Processo FAPESP: 13/17657-2 - Síntese e propriedades ópticas de sistemas semicondutores para aplicação em spintrônica
• Beneficiário: Marcio Peron Franco de Godoy
• Modalidade de apoio: Auxílio à Pesquisa - Regular
• Processo FAPESP: 16/10973-4 - Defeitos e suas funcionalidades em filmes óxidos semicondutores obtidos por spray-pirólise
• Beneficiário: Marcio Peron Franco de Godoy
• Modalidade de apoio: Auxílio à Pesquisa - Regular