| Texto completo | |
| Autor(es): |
Toloza Sandoval, M. A.
;
de Andrada e Silva, E. A.
;
Ferreira da Silva, A.
;
La Rocca, G. C.
Número total de Autores: 4
|
| Tipo de documento: | Artigo Científico |
| Fonte: | Semiconductor Science and Technology; v. 31, n. 11 NOV 2016. |
| Citações Web of Science: | 7 |
| Resumo | |
The electron effective g factor tensor in asymmetric III-V semiconductor quantum wells (AQWs) and its tuning with the structure parameters and composition are investigated with envelope-function theory and the 8 x 8k . p Kane model. The spin-dependent terms in the electron effective Hamiltonian in the presence of an external magnetic field are treated as a perturbation and the g factors g(perpendicular to){*} and g(parallel to){*}, for the magnetic field in the QW plane and along the growth direction, are obtained analytically as a function of the well width L. The effects of the structure inversion asymmetry (SIA) on the electron g factor are analyzed. For the g-factor main anisotropy Delta g = g(perpendicular to){*}-g(parallel to){*}. in AQWs, a sign change is predicted in the narrow well limit due to SIA, which can explain recent measurements and be useful in spintronic applications. Specific results for narrow-gap AlSb/InAs/GaSb and AlxGa1-xAsGaAs/AlyGa1-yAs AQWs are presented and discussed with the available experimental data; in particular InAs QWs are shown to not only present much larger g factors but also a larger g-factor anisotropy, and with the opposite sign with respect to GaAs QWs. (AU) | |
| Processo FAPESP: | 14/09878-1 - 32nd International Conference on the Physics of Semiconductors, ICPS-2014 |
| Beneficiário: | Erasmo Assumpção de Andrada e Silva |
| Modalidade de apoio: | Auxílio à Pesquisa - Reunião - Exterior |