Silicon Nanomembranes with Hybrid Crystal Orientations and Strain States

Autor(es)

Scott, Shelley A. ^[1] ; Deneke, Christoph ^{[2, 3, 4]} ; Paskiewicz, Deborah M. ^{[1, 5]} ; Ryu, Hyuk Ju ^{[1, 6]} ; Malachias, Angelo ^[7] ; Baunack, Stefan ^[3] ; Schmidt, Oliver G. ^[3] ; Savage, Donald E. ^[1] ; Eriksson, Mark A. ^[1] ; Lagally, Max G. ^[1]

Afiliação do(s) autor(es)

^[1] Univ Wisconsin, Madison, WI 53706 - USA

^[2] Univ Estadual Campinas, UNICAMP, Inst Fis Gleb Wataghin, Campinas, SP - Brazil

^[3] IFW Dresden, Helmholtzstr 20, D-01069 Dresden - Germany

^[4] Ctr Nacl Pesquisa Energia & Mat, Lab Nacl Nanotechnol, BR-13083100 Campinas, SP - Brazil

^[5] Motorola Inc, Chicago, IL 60654 - USA

^[6] Intel, Hillsboro, OR 97124 - USA

^[7] Univ Fed Minas Gerais, CP 702, BR-30123970 Belo Horizonte, MG - Brazil

• Tipo de documento: Artigo Científico
• Fonte: ACS APPLIED MATERIALS & INTERFACES; v. 9, n. 48, p. 42372-42382, DEC 6 2017.
• Citações Web of Science: 1

Resumo

Methods to integrate different crystal orientations, strain states, and compositions of semiconductors in planar and preferably flexible configurations may enable nontraditional sensing-, stimulating-, or communication-device applications. We combine crystalline-silicon nanomembranes, patterning, membrane transfer, and epitaxial growth to demonstrate planar arrays of different orientations and strain states of Si in a single membrane, which is then readily transferable to other substrates, including flexible supports. As examples, regions of Si(001) and Si(110) or strained Si(110) are combined to form a multicomponent, single substrate with high-quality narrow interfaces. We perform extensive structural characterization of all interfaces and measure charge-carrier mobilities in different regions of a 2D quilt. The method is readily extendable to include varying compositions or different classes of materials. (AU)

• Processo FAPESP: 16/14001-7 - Crescimento e fabricação de estruturas de membranas semicondutores para a pesquisa básica e aplicações de dispositivos potenciais
• Beneficiário: Christoph Friedrich Deneke
• Modalidade de apoio: Auxílio à Pesquisa - Regular