| Texto completo | |
| Autor(es): |
Acosta, Carlos Mera
[1]
;
Fazzio, Adalberto
Número total de Autores: 2
|
| Afiliação do(s) autor(es): | [1] Univ Sao Paulo, Inst Phys, CP 66318, BR-05315970 Sao Paulo, SP - Brazil
Número total de Afiliações: 1
|
| Tipo de documento: | Artigo Científico |
| Fonte: | Physical Review Letters; v. 122, n. 3 JAN 25 2019. |
| Citações Web of Science: | 3 |
| Resumo | |
Three-dimensional topological insulators protected by both the time reversal (TR) and mirror symmetries were recently predicted and observed. Two-dimensional materials featuring this property and their potential for device applications have been less explored. We find that, in these systems, the spin polarization of edge states can be controlled with an external electric field breaking the mirror symmetry. This symmetry requires that the spin polarization is perpendicular to the mirror plane; therefore, the electric field induces spin-polarization components parallel to the mirror plane. Since this field preserves the TR topological protection, we propose a transistor model using the spin direction of protected edge states as a switch. In order to illustrate the generality of the proposed phenomena, we consider compounds protected by mirror planes parallel and perpendicular to the structure, e.g., Na3Bi and half-functionalized (HF) hexagonal compounds, respectively. For this purpose, we first construct a tight-binding effective model for the Na3Bi compound and predict that HF-honeycomb lattice materials are also dual topological insulators. (AU) | |
| Processo FAPESP: | 17/02317-2 - Interfaces em materiais: propriedades eletrônicas, magnéticas, estruturais e de transporte |
| Beneficiário: | Adalberto Fazzio |
| Modalidade de apoio: | Auxílio à Pesquisa - Temático |
| Processo FAPESP: | 14/12357-3 - Tansistor baseado em spintrônica: caracterização topológica e transporte balístico em isolantes topológicos |
| Beneficiário: | Carlos Augusto Mera Acosta |
| Modalidade de apoio: | Bolsas no Brasil - Doutorado |