Characterization of nitrogen doped grapheme bilayers synthesized by fast, low temperature microwave plasma-enhanced chemical vapour deposition

Autor(es)

Boas, V, C. R. S. ; Focassio, B. ^[1] ; Marinho, Jr., E. ^[1] ; Larrude, D. G. ^[2] ; Salvadori, M. C. ^[3] ; Rocha Leao, C. ^[1] ; dos Santos, D. J. ^[1]

Afiliação do(s) autor(es)

^[1] Boas, C. R. S., V, Fed Univ ABC, Ctr Engn Modelagem & Ciencias Sociais Aplicadas, BR-09210580 Santo Andre - Brazil

^[2] Univ Prebiteriana Mackenzie, Graphene & NanoMat Res Ctr MackGraphe, BR-01302907 Sao Paulo - Brazil

^[3] Univ Sao Paulo, Phys Inst, BR-05508090 Sao Paulo - Brazil

• Tipo de documento: Artigo Científico
• Fonte: SCIENTIFIC REPORTS; v. 9, SEP 23 2019.
• Citações Web of Science: 1

Resumo

New techniques to manipulate the electronic properties of few layer 2D materials, unveiling new physical phenomena as well as possibilities for new device applications have brought renewed interest to these systems. Therefore, the quest for reproducible methods for the large scale synthesis, as well as the manipulation, characterization and deeper understanding of these structures is a very active field of research. We here report the production of nitrogen doped bilayer graphene in a fast single step (2.5 minutes), at reduced temperatures (760 degrees C) using microwave plasma-enhanced chemical vapor deposition (MW-PECVD). Raman spectroscopy confirmed that nitrogen-doped bilayer structures were produced by this method. XPS analysis showed that we achieved control of the concentration of nitrogen dopants incorporated into the final samples. We have performed state of the art parameter-free simulations to investigate the cause of an unexpected splitting of the XPS signal as the concentration of nitrogen defects increased. We show that this splitting is due to the formation of interlayer bonds mediated by nitrogen defects on the layers of the material. The occurrence of these bonds may result in very specific electronic and mechanical properties of the bilayer structures. (AU)

• Processo FAPESP: 16/19716-4 - Análise das características estruturais e eletrônicas de complexos de defeitos envolvendo nitrogênio em grafeno duas camadas
• Beneficiário: Bruno Focassio
• Modalidade de apoio: Bolsas no Brasil - Iniciação Científica
• Processo FAPESP: 12/50259-8 - Grafeno: fotônica e opto-eletrônica: colaboração UPM-NUS
• Beneficiário: Antonio Helio de Castro Neto
• Modalidade de apoio: Auxílio à Pesquisa - Programa SPEC
• Processo FAPESP: 17/22936-9 - Refratometria ótica com modulação de temperatura: uma perspectiva molecular na cinética de cura e separação de fases de poliuretanos a partir de lignina
• Beneficiário: Demetrio Jackson dos Santos
• Modalidade de apoio: Auxílio à Pesquisa - Regular