| Texto completo | |
| Autor(es): |
Boratto, Miguel H.
[1]
;
Lima, Joao V. M.
[1, 2]
;
Scalvi, Luis V. A.
[1, 2]
;
Graeff, Carlos F. O.
[1, 2]
Número total de Autores: 4
|
| Afiliação do(s) autor(es): | [1] Sao Paulo State Univ Unesp, Sch Sci, Dept Phys, BR-17033360 Bauru, SP - Brazil
[2] Sao Paulo State Univ Unesp, Sch Sci, POSMAT Postgrad Program Mat Sci & Technol, BR-17033360 Bauru, SP - Brazil
Número total de Afiliações: 2
|
| Tipo de documento: | Artigo Científico |
| Fonte: | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS; v. 31, n. 18 AUG 2020. |
| Citações Web of Science: | 0 |
| Resumo | |
In this work, zirconium oxide (ZrO2) films obtained by the polymer-assisted chemical solution method were evaluated. Thin films are obtained using dip-coating with dipping rates from 1 to 100 mm/min, and annealing temperatures from 150 to 450 degrees C. The films present amorphous structure even with annealing at 450 degrees C, bandgap of 5.4 eV and a non-porous surface. The zirconia films were electrically characterized applied to a metal-insulator-metal capacitor (MIM-c) configuration. The dielectric layer presents high capacitance and impedance, highly dependent on the dipping rates and annealing temperature. The outcomes from the MIM-c investigated demonstrate that this low-temperature zirconia film may be an alternative for application in flexible electronic devices as insulating layer. More interesting results like higher capacitance and higher operation frequencies are obtained for zirconia layers obtained at 350 degrees C due to better dipole formation in the film enhanced by the thinner films and a better elimination of polymeric ligands in the film. (AU) | |
| Processo FAPESP: | 18/26039-4 - Investigação do semicondutor óxido SnO2, na forma de filmes finos, e combinação com Cu2-xS formando heteroestruturas multicamadas |
| Beneficiário: | João Victor Morais Lima |
| Modalidade de apoio: | Bolsas no Brasil - Mestrado |
| Processo FAPESP: | 13/07296-2 - CDMF - Centro de Desenvolvimento de Materiais Funcionais |
| Beneficiário: | Elson Longo da Silva |
| Modalidade de apoio: | Auxílio à Pesquisa - Centros de Pesquisa, Inovação e Difusão - CEPIDs |
| Processo FAPESP: | 17/20809-0 - Estudo de dispositivos orgânicos para aplicações em bioeletrônica |
| Beneficiário: | Miguel Henrique Boratto |
| Modalidade de apoio: | Bolsas no Brasil - Pós-Doutorado |