Strain-polarization coupling mechanism of enhanced conductivity at the grain boundaries in BiFeO3 thin films

Autor(es):Mostrar menos -

Alikin, Denis ^[1] ; Fomichov, Yevhen ^[2] ; Reis, Saulo Portes ^{[3, 4]} ; Abramov, Alexander ^[1] ; Chezganov, Dmitry ^[1] ; Shur, Vladimir ^[1] ; Eliseev, Eugene ^[5] ; Kalinin, Sergei V. ^[6] ; Morozovska, Anna ^[7] ; Araujo, Eudes B. ^[3] ; Kholkin, Andrei ^{[8, 9]}

Afiliação do(s) autor(es)

^[1] Ural Fed Univ, Sch Nat Sci & Math, Ekaterinburg 620100 - Russia

^[2] Charles Univ Prague, Fac Math & Phys, Prague 18000 8 - Czech Republic

^[3] Sao Paulo State Univ, Dept Chem & Phys, Ilha Solteira, SP - Brazil

^[4] Fed Inst Educ Sci & Technol Sao Paulo, BR-15503110 Votuporanga - Brazil

^[5] Natl Acad Sci Ukraine, Inst Problems Mat Sci, UA-03142 Kiev - Ukraine

^[6] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 - USA

^[7] Natl Acad Sci Ukraine, Inst Phys, UA-03028 Kiev - Ukraine

^[8] Univ Aveiro, Dept Phys, P-3810193 Aveiro - Portugal

^[9] Univ Aveiro, CICECO Aveiro Inst Mat, P-3810193 Aveiro - Portugal

• Tipo de documento: Artigo Científico
• Fonte: APPLIED MATERIALS TODAY; v. 20, SEP 2020.
• Citações Web of Science: 1

Resumo

Charge transport across the interfaces in complex oxides attracts a lot of attention because it allows creating novel functionalities useful for device applications. It has been observed that movable domain walls in epitaxial BiFeO3 films possess enhanced conductivity that can be used for reading out in ferroelectricbased memories. In this work, the relation between the polarization, strain and conductivity in sol-gel BiFeO3 films with special emphasis on grain boundaries as natural interfaces in polycrystalline ferroelectrics is investigated. The interaction between polarization and grain boundaries occuring at elevated temperatures during or after material sintering stage leads to the formation of branched network of highly conductive grain boundaries with the electrical conductivity about two orders higher than in the bulk. At room temperature, these conductive traces stabilized by the defects remain and do not change upon polarization switching. These collective states provide further insight into the physics of complex oxide ferroelectrics and may strongly affect their practical applications, because reveal an additional mechanism of the leakage current in such systems. (c) 2020 Elsevier Ltd. All rights reserved. (AU)

• Processo FAPESP: 17/13769-1 - Materiais multiferróicos e ferroelétricos para conversores de energia: síntese, propriedades, fenomenologia e aplicações
• Beneficiário: José Antonio Eiras
• Modalidade de apoio: Auxílio à Pesquisa - Temático