The Impact of LCE and PAMDLE Regarding Different CMOS ICs Nodes and High Temperatures

Autor(es)

Galembeck, Egon Henrique Salerno ^[1] ; Renaux, Christian ^[2] ; Swart, Jacobus Willibrordus ^[3] ; Flandre, Denis ^[2] ; Gimenez, Salvador Pinillos ^[1]

Afiliação do(s) autor(es)

^[1] FEI Univ Ctr, Dept Elect Engn, BR-09850901 Sao Paulo - Brazil

^[2] Catholic Univ Louvain, ICTEAM Inst, B-1348 Louvain La Neuve - Belgium

^[3] UNICAMP Univ, UNICAMP, FEEC, BR-13083970 Campinas - Brazil

• Tipo de documento: Artigo Científico
• Fonte: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY; v. 9, p. 415-423, 2021.
• Citações Web of Science: 0

Resumo

This paper describes the influence of Longitudinal Corner Effect (LCE effect) and PArallel Connection of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) with Different Channel Lengths Effect (PAMDLE effect) of Diamond (hexagonal gate shape) MOSFET in different Complementary Metal-Oxide-Semiconductor (CMOS) Integrated Circuits (ICs) technologies (180nm-Bulk and 1 mu m-Silicon-On-Insulator, SOI) and in a wide range of high-temperatures (from 300K to 573K). The results have shown (average gains of Diamond MOSFET in relation to standard MOSFET: 60% for saturation drain current, 51% for transconductance, 10% for transconductance-over-drain current ratio etc.) that LCE and PAMDLE effects tend to be similar for CMOS ICs technological nodes used and the different high temperatures. Therefore, we can conclude, for the first time, that LCE and PAMDLE effects are kept active in different CMOS ICs technological nodes and when the Diamond MOSFET is exposed at high temperatures. (AU)

• Processo FAPESP: 17/10718-7 - Estudo Experimental do comportamento elétrico do MOSFET do tipo elipsoidal submetido em ambientes de ALTAS TEMPERATURAS
• Beneficiário: Egon Henrique Salerno Galembeck
• Modalidade de apoio: Bolsas no Brasil - Doutorado