Autor(es)

Shasmal, Nilanjana ; Faria, Walter Jose Gomes Juste ; de Camargo, Andrea Simone Stucchi ; Rodrigues, Ana Candida Martins

• Tipo de documento: Artigo Científico
• Fonte: Journal of Luminescence; v. 243, p. 12-pg., 2022-03-01.

Resumo

Eu3+ and CdS were singly doped and co-doped into chloroborosilicate glasses with composition 37.8SiO2-27B2O3-18BaO-3.6K2O-3.6Al2O3-10BaCl2 (mol%), by one-step melt quench technique. The samples were characterized by transmission electron microscopy (TEM), UV-Vis absorption, excitation, and emission spectroscopy. TEM images revealed the presence of CdS quantum dots (QDs) of size 5-20 nm in the CdS-doped glasses. The Eu-doped glass shows characteristic orange emission of Eu3+ at 393 nm excitation, while excitation at 250 and 317 nm revealed the existence of Eu2+ ions. There are strong evidences of energy transfer involving the charge transfer band (CTB) and different energy levels of Eu2+ and Eu3+ ions. The CdS-doped glass showed broad emission bands, originating from various electronic transitions involving defect and trap states in CdS crystalline structure. The emission band in the lower wavelength region, shows a red shift with increasing excitation wavelength, which proves the quantum confinement effect in CdS QDs. Eu/CdS co-doped glasses showed significant enhancements in Eu3+/Eu2+ emissions, up to 20 and 70 times, upon excitations at 393 and 317 nm, respectively, which is considerably higher compared to previously reported similar systems. This enhancement is attributed to a complex energy transfer occurring between Eu2+/Eu3+ and CdS QDs, reported for the first time in a glassy system, especially considering the in-situ growth of the QDs during melt. The co-doped glass also showed pure white emission at 6-7 nm slit width upon 387 nm excitation, which is a novel finding from an Eu/CdS co-doped glass. (AU)

• Processo FAPESP: 18/04113-8 - Síntese, Propriedades Ópticas e Aplicações de Vidros e Vitro-Cerâmicas com Nanopartículas Dispersas de Semicondutor ou Híbridas de Semicondutor-metal.
• Beneficiário: Nilanjana Shasmal
• Modalidade de apoio: Bolsas no Brasil - Pós-Doutorado