Busca avançada
Ano de início
Entree


Analytical study of a solution-processed diode based on ZnO nanoparticles using multi-walled carbon nanutubes as Schottky contact

Texto completo
Autor(es):
Bertoldo, Luis H. T. ; Nogueira, Gabriel L. ; Vieira, Douglas H. ; Klem, Maykel S. ; Ozorio, Maiza S. ; Alves, Neri
Número total de Autores: 6
Tipo de documento: Artigo Científico
Fonte: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS; v. 33, n. 18, p. 11-pg., 2022-05-23.
Resumo

The search for good electrodes processed by solution has interested several niches to produce printed solar cells, lighting emitting diodes, transistors, and photodetectors. In this context, carbon nanotube (CNT) has been reported as a promising electrode material, being suitable for several printing techniques such as inkjet, screen-printing, and spray-coating. Here, we present a successfully manufactured spray-deposited diode based on the Schottky junction between multi-walled carbon nanotubes (MWCNTs) and zinc oxide nanoparticles (ZnO-NPs), both deposited by spray. Using analytical methods, we estimated the diode series resistance as 6.2 k Omega and the ideality factor as 2.2. The good morphological characteristics of the ZnO-NP and MWCNT films resulted in a good interface, allowing the junction to achieve a high effective Schottky barrier height of 0.82 eV, high rectification ratio of 1 x 10(4), and low turn-on voltage of 0.55 V. (AU)

Processo FAPESP: 18/02037-2 - Desenvolvimento de transistores verticais de efeito de campo impressos
Beneficiário:Gabriel Leonardo Nogueira
Modalidade de apoio: Bolsas no Brasil - Doutorado
Processo FAPESP: 21/01548-6 - Estudo de um fotodiodo Schottky híbrido à base de ZnO e PEDOT:PSS
Beneficiário:Luís Henrique Tigre Bertoldo
Modalidade de apoio: Bolsas no Brasil - Mestrado
Processo FAPESP: 18/02604-4 - Estudo de supercapacitores impressos integrando transistores com eletrólito no gate
Beneficiário:Maykel dos Santos Klem
Modalidade de apoio: Bolsas no Brasil - Doutorado
Processo FAPESP: 20/12282-4 - Desenvolvimento de transistores verticais de efeito de campo com eletrólito no gate para fotodetectores UV
Beneficiário:Douglas Henrique Vieira
Modalidade de apoio: Bolsas no Brasil - Doutorado