Growth of pure and intercalated ZrTe2, TiTe2 and HfTe2 dichalcogenide single crystals by isothermal chemical vapor transport

Autor(es)

Correa, Lucas E. ; de Faria, Leandro R. ; Cardoso, Rennan S. ; Chaia, Nabil ; da Luz, Mario S. ; Torikachvili, Milton S. ; Machado, Antonio J. S.

• Tipo de documento: Artigo Científico
• Fonte: Journal of Crystal Growth; v. 595, p. 4-pg., 2022-10-01.

Resumo

We report on a modified chemical vapor transport (CVT) methodology for the growth of pure and intercalated Zr, Ti, and Hf dichalcogenide single crystals, e.g. ZrTe2, Gd0.05ZrTe2, HfTe2, and Cu0.05TiTe2. While the most common method for CVT growth is carried out in quartz tubes subjected to a temperature gradient between the charge and the growth location, the growth using this isothermal-CVT (ICVT) method takes place isothermally in sealed quartz tubes placed horizontally in box furnaces, using iodine (I2) as the transport agent. The structure and composition of crystals were determined by means of X-ray diffraction (XRD), energy dispersive spectroscopy (EDS), and induced coupling plasma, utilizing microwave plasma atomic emission spectroscopy (ICP-MP-AES). The crystals grown with this method can be large, and show excellent crystallinity and homogeneity. Their morphology is plate-like, and the larger dimensions can be as long as 15 mm. (AU)

• Processo FAPESP: 18/08819-2 - Crescimento de monocristais de dicalcogênios de protótipo CdI2 e investigação de propriedades supercondutoras
• Beneficiário: Lucas Eduardo Corrêa
• Modalidade de apoio: Bolsas no Brasil - Doutorado
• Processo FAPESP: 19/14359-7 - Crescimento de cristais e investigação de propriedades supercondutoras topológicas em dicalcogeneto de metais de transição
• Beneficiário: Antonio Jefferson da Silva Machado
• Modalidade de apoio: Auxílio à Pesquisa - Regular