| Texto completo | |
| Autor(es): |
Alberton, S. G.
;
Medina, N. H.
;
Added, N.
;
Aguiar, V. A. P.
;
Guazzelli, M. A.
;
Santos, R. B. B.
;
IEEE
Número total de Autores: 7
|
| Tipo de documento: | Artigo Científico |
| Fonte: | 2021 21ST EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS); v. N/A, p. 5-pg., 2021-01-01. |
| Resumo | |
Lackner's theory for avalanche multiplication in semiconductor devices provides physical interpretation for the model parameters and obtaining them through experimental methods is necessary. In this work, the charge collection mechanisms of heavy-ion-induced avalanche multiplication in power MOSFETs are studied based on Lackner's impact ionization model. The heavy-ion-induced impact ionization coefficients were estimated by comparing collected charge values obtained from computational simulations and experimental measurements. (AU) | |
| Processo FAPESP: | 12/03383-5 - Desenvolvimento de metodologia de ensaios de radiação em componentes eletrônicos |
| Beneficiário: | Nilberto Heder Medina |
| Modalidade de apoio: | Auxílio à Pesquisa - Regular |