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Effects of Indium on Wetting and Interfacial Features of a Sn-40Bi Alloy in a Copper Substrate

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Autor(es):
da Silva Leal, Jaderson Rodrigo ; Valenzuela Reyes, Rodrigo Andre ; de Gouveia, Guilherme Lisboa ; Coury, Francisco Gil ; Spinelli, Jose Eduardo
Número total de Autores: 5
Tipo de documento: Artigo Científico
Fonte: JOURNAL OF ELECTRONIC MATERIALS; v. N/A, p. 14-pg., 2023-02-07.
Resumo

The influence of In on the solidification path, microstructure, wettability, tensile properties, and interfacial features of a Sn-40Bi alloy was studied using Computer Coupling of Phase Diagrams and Thermochemistry (CALPHAD) calculations, differential scanning calorimetry, scanning electron microscopy, x-ray diffraction, wettability testing and tensile testing. The microstructures were composed of Sn-rich matrixes with Sn-Bi and BiIn-Bi constituents. Significant sensitivity of the microstructural scale to the solidification cooling rate was also demonstrated by employing different processing conditions. Because of the relatively high BiIn fraction on the microstructure, a limited elongation of approximately 7% was achieved, with ultimate tensile strength of 65 MPa. Cu-6(Sn, In)(5) was the intermetallic phase of the reaction film for the Sn-Bi-In/Cu interface under all tested conditions, including as-soldered and aged at 100 degrees C and 120 degrees C for 120 h, 240 h, and 360 h. Wetting angles for the ternary Sn-Bi-In alloy were maintained at approximately 20 degrees, which is smaller than usual for Sn-Bi alloys. The new phase, Cu-6(Sn, In)(5), produced instead of Cu6Sn5, showed a lower growth rate than that observed in In-free couples. The mechanisms of wetting and the Cu-6(Sn, In)(5)-layer growth are discussed. (AU)

Processo FAPESP: 19/23673-7 - Avaliação de ligas para juntas térmicas e para manufatura aditiva
Beneficiário:José Eduardo Spinelli
Modalidade de apoio: Auxílio à Pesquisa - Regular
Processo FAPESP: 21/08436-9 - Eletromigração e microtomografia 4D em juntas térmicas Sn-Bi-In
Beneficiário:José Eduardo Spinelli
Modalidade de apoio: Bolsas no Exterior - Pesquisa