Inter-Landau level transfer in valence band of In0.53Ga0.47As/InP quantum well

Autor(es)

Patricio, M. A. Tito ; Teodoro, M. D. ; Jacobsen, G. M. ; LaPierre, R. R. ; Pusep, Yu. A.

• Tipo de documento: Artigo Científico
• Fonte: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES; v. 143, p. 5-pg., 2022-06-29.

Resumo

The recombination dynamics of photoexcited holes is studied in an In0.53Ga0.47As/InP quantum well in a quantizing magnetic field. The experimental data are analyzed in a framework of the four level system formed in the valence band by Landau levels. As a result, the characteristic times including the inter-Landau level transfer time, the spin relaxation time, and the interband recombination time are obtained. The inverse population of higher energy Landau level is found due to the slow transfer between Landau levels as compared to the fast interband recombination. It is demonstrated that optical spin injection led to about 50% spin polarization in the inversely populated Landau level, while the lowest energy Landau level is unpolarized. (AU)

• Processo FAPESP: 15/16191-5 - Pesquisas em novos materiais envolvendo campos magnéticos intensos e baixas temperaturas
• Beneficiário: Gennady Gusev
• Modalidade de apoio: Auxílio à Pesquisa - Temático