| Texto completo | |
| Autor(es): Mostrar menos - |
Alberton, Saulo G.
;
Aguiar, V. A. P.
;
Medina, N. H.
;
Added, N.
;
Macchione, E. L. A.
;
Menegasso, R.
;
Cesario, G. J.
;
Santos, H. C.
;
Scarduelli, V. B.
;
Alcantara-Nunez, J. A.
;
Guazzelli, M. A.
;
Santos, R. B. B.
;
Flechas, D.
Número total de Autores: 13
|
| Tipo de documento: | Artigo Científico |
| Fonte: | MICROELECTRONICS RELIABILITY; v. 137, p. 7-pg., 2022-10-01. |
| Resumo | |
The heavy-ion-induced single-event burnout (SEB) risk in power MOSFETs (metal-oxide-semiconductor field-effect transistors) can be assessed in ground facilities, although it is costly and time-demanding. For this reason, there have been few experimental studies dedicated to investigate the relevant parameter related to the description of ion-induced SEB phenomenon. In this work the heavy-ion-induced SEB in a low-voltage power VDMOSFET (vertical double-diffused MOSFET) is studied using several ion-energy combinations. A self -consistent statistical analysis is carried out in order to elucidate the relationship between charge deposition and SEB triggering. Experimental data is compared to a predictive model from the literature for SEE (single-event effect) worst-case prediction in power MOSFETs, supporting for the first time its relevance to the worst-case prediction in the SEB mechanism. (AU) | |
| Processo FAPESP: | 12/03383-5 - Desenvolvimento de metodologia de ensaios de radiação em componentes eletrônicos |
| Beneficiário: | Nilberto Heder Medina |
| Modalidade de apoio: | Auxílio à Pesquisa - Regular |