| Texto completo | |
| Autor(es): |
Volpato, Maria Carolina
;
de Assis, Pierre-Louis
;
Frateschi, Newton Cesario
;
IEEE
Número total de Autores: 4
|
| Tipo de documento: | Artigo Científico |
| Fonte: | 2023 INTERNATIONAL CONFERENCE ON OPTICAL MEMS AND NANOPHOTONICS, OMN AND SBFOTON INTERNATIONAL OPTICS AND PHOTONICS CONFERENCE, SBFOTON IOPC; v. N/A, p. 2-pg., 2023-01-01. |
| Resumo | |
We investigate the potential of 1T'-MoTe2 as a saturable absorber for silicon photonics devices. By optimizing the coupling coefficient between the 2D material and the waveguide, we achieve a maximum coupling of 18%. Utilizing carrier statistics calculations, we estimate the saturation intensity per effective interaction length as 7.5MW/cm(2).nm at 1560nm. Our simulation suggests that the saturation intensity in an optimized waveguide reaches approximately 13MW/cm(2). (AU) | |
| Processo FAPESP: | 18/25339-4 - Dispositivos fotônicos integrados |
| Beneficiário: | Newton Cesario Frateschi |
| Modalidade de apoio: | Auxílio à Pesquisa - Temático |