Autor(es)

Cardozo de Oliveira, E. R. ; Pfenning, A. ; Guarin Castro, E. D. ; Teodoro, M. D. ; dos Santos, E. C. ; Lopez-Richard, V. ; Marques, G. E. ; Worschech, L. ; Hartmann, F. ; Hoefling, S.

• Tipo de documento: Artigo Científico
• Fonte: PHYSICAL REVIEW B; v. 98, n. 7, p. 6-pg., 2018-08-01.

Resumo

We explore the nature of the electroluminescence (EL) emission of purely n-doped GaAs/AlGaAs resonant tunneling diodes (RTDs) and the EL evolution with voltage. A singular feature of such a device is unveiled when the electrical output current changes from higher to lower values and the EL on-off ratio is enhanced by two orders of magnitude compared to the current on-off ratio. By combining the EL and the current properties, we are able to identify two independent impact ionization channels associated with the coherent resonant tunneling current and the incoherent valley current. We also perform the same investigation with an associated series resistance, which induces a bistable electrical output in the system. By simulating a resistance variation for the current voltage and the EL, we are able to tune the EL on-off ratio by up to six orders of magnitude. We further observe that the EL on and off states can be either direct or inverted compared to the tunneling current of the on and off states. This electroluminescence, combined with the unique RTD properties, such as the negative differential resistance and high-frequency operation, enables the development of high-speed functional optoelectronic devices and optical switches. (AU)

• Processo FAPESP: 14/02112-3 - Fenômenos ópticos e de transporte em nano-dispositvos
• Beneficiário: Victor Lopez Richard
• Modalidade de apoio: Auxílio à Pesquisa - Regular
• Processo FAPESP: 13/18719-1 - Dinâmica de Portadores Eletrônicos em Nanoestruturas Semicondutoras
• Beneficiário: Marcio Daldin Teodoro
• Modalidade de apoio: Auxílio à Pesquisa - Jovens Pesquisadores
• Processo FAPESP: 14/19142-2 - Caracterização e processamento de nanoestruturas semicondutoras e aplicações como dispositivos
• Beneficiário: Gilmar Eugenio Marques
• Modalidade de apoio: Auxílio à Pesquisa - Temático
• Processo FAPESP: 16/50080-9 - Paulista bavarian worksho nano tailored semiconductor devices (ntsd) | sao carlos - sp
• Beneficiário: Gilmar Eugenio Marques
• Modalidade de apoio: Auxílio Organização - Reunião Científica
• Processo FAPESP: 14/07375-2 - EMU concedido no projeto 2013/18719-1: Sistema de Medidas Resolvidas no Tempo.
• Beneficiário: Marcio Daldin Teodoro
• Modalidade de apoio: Auxílio à Pesquisa - Programa Equipamentos Multiusuários