| Texto completo | |
| Autor(es): |
Andriotti Jr, Mauro Antonio
;
Bernardi, Maria Ines Basso
;
Mesquita, Alexandre
Número total de Autores: 3
|
| Tipo de documento: | Artigo Científico |
| Fonte: | Journal of Alloys and Compounds; v. 955, p. 7-pg., 2023-04-26. |
| Resumo | |
Phosphor materials with narrow emission bands and high quantum efficiency have received a good amount of attention, suggesting the possibility of several applications in the field of optoelectronic devices. SrTiO3:Pr is an example of a material with these characteristics. In this study, mesocrystal samples of Sr0.998Pr0.002Ti1-yAlyO3 (SrTiO3:Pr,Al) were prepared via a hydrothermal route, and the morphology pre-sented a microcube shape and pristine structure with Pm3m space group without any spurious phases for all Al concentrations. Measurements of X-ray absorption spectroscopy (XAS) at Ti K-, LII,III-, and O K-edges, calculated projected density of states, and Raman spectroscopy revealed that the hydrothermal method and Al incorporation cause a local symmetry breaking, deviating from the cubic structure, Ti off-center dis-placement, tilting of TiO6 octahedra, and O vacancies. As the Al content increases, the intensity of some emissions in the photoluminescence spectra also increases up to 3 at%. The disorder produced by Al con-centration leads to a lower symmetry around Pr3+ sites, resulting in an increase in the probabilities of transitions for Pr3+ ions due to the mixing of the opposite parity in 4 f configurational levels. On the other hand, higher Al concentrations cause a decrease in the intensity of Pr emissions, which is related to their quenching because of O vacancies. Additionally, intrinsic defects due to the hydrothermal route and Al incorporation generate a broad emission in the photoluminescence spectra. This broad emission is asso-ciated with intermediary electronic levels in the band gap caused by these intrinsic defects.(c) 2023 Elsevier B.V. All rights reserved. (AU) | |
| Processo FAPESP: | 13/12993-4 - Síntese e caracterização de materiais semicondutores nanoestruturados luminescentes |
| Beneficiário: | Alexandre Mesquita |
| Modalidade de apoio: | Auxílio à Pesquisa - Regular |