Correlation between Critical Energy, Penetration Depth, and Photopolymerization Kinetics in Aluminum-Phosphate-Silicate Hybrid Materials for Vat Photopolymerization

Autor(es)

Tayama, Gabriel Toshiaki ; Messaddeq, Sandra Helena ; Santagneli, Silvia Helena ; Messaddeq, Younes

• Tipo de documento: Artigo Científico
• Fonte: MACROMOLECULES; v. 56, n. 11, p. 13-pg., 2023-05-23.

Resumo

The photopolymerization of aluminum-phosphate-silicateresins obtained from the hybrid sol-gel route for Vat photopolymerization(VPP) process was investigated. The printing parameters derived fromJacob's work curve model, critical energy (E (c)) and penetration depth (D (p)), were determined as a function of laser power and MPTMS (silicate)concentration for materials with stoichiometry Si-(x)-(Al + P)((1-x)), 0 <= x <= 0.7. The kinetics of photopolymerization wasfurther explored using steady- and unsteady-state photo-DSC experiments.The oxygen inhibition and primary termination had similar contributionsto the polymerization process for all compositions, while the propagationand bimolecular termination constants increased with MPTMS concentration.These experimental results were used to test the validity of the E (c) proportional to k ( t ) (1/2)/k (p) and D (p) proportional to epsilon relationship derived from a photochemicalmodel for VPP assuming steady-state kinetics. Both E (c) proportional to (k ( t ) (1/2)/k (p)) and D (p) proportional to epsilon may be used to predict criticalenergy and penetration values for an arbitrary resin without calculatingits work curve function, according to our study. (AU)

• Processo FAPESP: 18/24735-3 - Correlação entre a estrutura e as propriedades investigada por RMN multinuclear no estado sólido em materiais desordenados
• Beneficiário: Silvia Helena Santagneli
• Modalidade de apoio: Auxílio à Pesquisa - Regular
• Processo FAPESP: 18/06426-3 - Desenvolvimento de coacervatos para manufatura aditiva/impressão 3D de materiais fotônicos
• Beneficiário: Gabriel Toshiaki Tayama
• Modalidade de apoio: Bolsas no Brasil - Doutorado Direto