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A study by GISAXS of PbTe/SiO2 multilayer deposited on Si(111)

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Autor(es):
Kellermann, G. ; Rodriguez, E. ; Jimenez, E. ; Chillcce, E. ; Cesar, C. L. ; Barbosa, L. C. ; Eyink, KG ; Huffaker, DL ; Szmuloqicz, F
Número total de Autores: 9
Tipo de documento: Artigo Científico
Fonte: MEDICAL IMAGING 2007: PACS AND IMAGING INFORMATICS; v. 6481, p. 6-pg., 2007-01-01.
Resumo

Multilayers of PbTe quantum dots embedded in SiO2 were fabricated by alternatively use of Laser Ablation and Plasma Enhanced Chemical Vapor Deposition techniques. A set omicron samples containing different PbTe nanoparticles sizes was prepared for the study. The morphological properties of the nanostructured material were studied by means of grazing-incidence small-angle X-ray scattering (GISAXS) and x-ray reflectometry (XRR) techniques. A preliminary analysis of the GISAXS spectra provided information about the multilayer periodicity and its relationship to the size of the deposited PbTe nanoparticles. (AU)

Processo FAPESP: 04/06950-1 - Dispositivos opticos ultra-rapidos baseados em interferometros fabry perot contendo multicamadas de quantum dots semicondutores das familias pbe e cde (e=s, se e te).
Beneficiário:Eugenio Rodriguez Gonzalez
Modalidade de apoio: Bolsas no Brasil - Pós-Doutorado