Low Voltage Organic Devices with High-k TiOxNy and PMMA Dielectrics for Future Application on Flexible Electronics

Autor(es)

Zanchin, V. R. ; Cavallari, M. R. ; Fonseca, F. J. ; Albertin, K. F. ; Pereyra, I. ; Andrade, A. M. ; Pavanello, MA ; Freire, RCS ; Naviner, JF ; Bonnaud, O

• Tipo de documento: Artigo Científico
• Fonte: MICROELECTRONICS TECHNOLOGY AND DEVICES - SBMICRO 2011; v. 39, n. 1, p. 6-pg., 2011-01-01.

Resumo

We report the first low voltage organic P3HT transistor over glass substrates and titanium oxynitride (TiOxNy) deposited by reactive r.f. magnetron sputtering. The transistor operating voltage was -3V with a maximum current of 1.11 mu A. Charger carrier mobility (mu) was 0.01 cm(2)/Vs, threshold voltage (V-t) -0.5 V, on-off current ratio (I-ON/OFF) 200 and subthreshold swing (S) 0.75 V/decade. We also present a study of the dielectric constant (k) of organic insulator PMMA in several processing conditions. ITO/PMMA/Au capacitors provided a dielectric constant of ca. 3.5, which is very similar to SiO2 performance. (AU)

• Processo FAPESP: 09/05589-7 - Estudo e desenvolvimento de LEDs orgânicos, células solares, transistores de filmes finos e sensores baseados em polímeros semicondutores
• Beneficiário: Adnei Melges de Andrade
• Modalidade de apoio: Auxílio à Pesquisa - Regular