| Texto completo | |
| Autor(es): |
Zanchin, V. R.
;
Cavallari, M. R.
;
Fonseca, F. J.
;
Albertin, K. F.
;
Pereyra, I.
;
Andrade, A. M.
;
Pavanello, MA
;
Freire, RCS
;
Naviner, JF
;
Bonnaud, O
Número total de Autores: 10
|
| Tipo de documento: | Artigo Científico |
| Fonte: | MICROELECTRONICS TECHNOLOGY AND DEVICES - SBMICRO 2011; v. 39, n. 1, p. 6-pg., 2011-01-01. |
| Resumo | |
We report the first low voltage organic P3HT transistor over glass substrates and titanium oxynitride (TiOxNy) deposited by reactive r.f. magnetron sputtering. The transistor operating voltage was -3V with a maximum current of 1.11 mu A. Charger carrier mobility (mu) was 0.01 cm(2)/Vs, threshold voltage (V-t) -0.5 V, on-off current ratio (I-ON/OFF) 200 and subthreshold swing (S) 0.75 V/decade. We also present a study of the dielectric constant (k) of organic insulator PMMA in several processing conditions. ITO/PMMA/Au capacitors provided a dielectric constant of ca. 3.5, which is very similar to SiO2 performance. (AU) | |
| Processo FAPESP: | 09/05589-7 - Estudo e desenvolvimento de LEDs orgânicos, células solares, transistores de filmes finos e sensores baseados em polímeros semicondutores |
| Beneficiário: | Adnei Melges de Andrade |
| Modalidade de apoio: | Auxílio à Pesquisa - Regular |