| Texto completo | |
| Autor(es): |
Bononi dos Santos, B. H.
;
Galvao Gobato, Y.
;
Henini, M.
Número total de Autores: 3
|
| Tipo de documento: | Artigo Científico |
| Fonte: | APPLIED SCIENCE AND CONVERGENCE TECHNOLOGY; v. 23, n. 5, p. 10-pg., 2014-09-01. |
| Resumo | |
In this paper, we present a review of optical and structural studies of GaBixAs1-x epilayers grown by Molecular Beam Epitaxy (MBE) on (311)B and (001) GaAs substrates with different As fluxes. The results indicate that under near-stoichiometric conditions the bismuth incorporation is higher for samples grown on (311) B GaAs substrates than for those grown on (001) GaAs. In addition, carrier localization effects in GaBiAs layers are clearly revealed for both samples by optical measurements. The (311) B samples showed evidence of higher density of defects. It has also been found that the nonradiative centers play a significant role in the recombination process in this material system. The influence of post-growth annealing on the microstructural, optical, and magneto-optical properties was also investigated. An important improvement of optical and spin properties after thermal annealing due to the reduction of defects in the GaBiAs layers was observed. (AU) | |
| Processo FAPESP: | 12/24055-6 - Propriedades óticas, elétricas e de spin de nanoestruturas e nanodispositivos semicondutores |
| Beneficiário: | Yara Galvão Gobato |
| Modalidade de apoio: | Auxílio à Pesquisa - Regular |